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Title: Comparison of the electronic structures of layered transition-metal trichalcogenides TaSe sub 3 , TaS sub 3 , and NbSe sub 3

Journal Article · · Inorganic Chemistry; (USA)
DOI:https://doi.org/10.1021/ic00332a024· OSTI ID:7121555
; ;  [1]; ; ;  [2]; ; ;  [3]
  1. Universite de Paris-Sud, Orsay (France)
  2. Universite de Nantes (France)
  3. North Carolina State Univ., Raleigh (USA)

The electronic structures of the three layered transition metal-trichalcogenides NbSe{sub 3}, TaS{sub 3}, and TaSe{sub 3} were examined by performing tight-binding band electronic structure calculations. The Fermi surfaces of these materials were also calculated to analyze their metallic and/or charge density wave properties. In these trichalcogenides MX{sub 3} (M = Nb, Ta; X = S, Se) made up of prismatic MX{sub 3} chains, the broken X-X bonds of their equilateral-like MX{sub 3} chains and the short intra- and interlayer X{hor ellipsis}X contacts are found to be crucial for the semimetallic properties of TaSe{sub 3} and for the charge density wave phenomena of NbSe{sub 3} and TaS{sub 3}. For the electronic parameters of the charge density waves in NbSe{sub 3} and TaS{sub 3} a quantitative agreement is obtained between the experimental observations and the present band electronic structure calculations. 29 refs., 9 figs., 3 tabs.

DOE Contract Number:
FG05-86ER45259
OSTI ID:
7121555
Journal Information:
Inorganic Chemistry; (USA), Vol. 29:7; ISSN 0020-1669
Country of Publication:
United States
Language:
English