Si indiffusion on Ge(100)-(2 times 1) studied by core-level photoemission

Journal Article · Fri May 15 00:00:00 EDT 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.45.11415· OSTI ID:7113603

Lin, D; Miller, T; Chiang, T ^[1]

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1. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (United States) Material Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)

Core-level photoemission spectroscopy has been utilized to study the adsorption and growth of Si on Ge(100)-(2{times}1) by molecular-beam epitaxy. The populations of Si and Ge atoms in the surface are monitored by measuring the intensities of the surface-shifted Si and Ge core-level components. After several atomic layers of Si are deposited on Ge(100) at a growth temperature of 450 C, the top layer which forms the (2{times}1) reconstruction consists of Ge atoms only. This tendency for Si atoms to move below the surface persists even for growth at about room temperature.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 7113603
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 45:19; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SILICON
ADSORPTION
DIFFUSION
CRYSTAL GROWTH
MOLECULAR BEAM EPITAXY
PHOTOEMISSION
ELEMENTS
EMISSION
EPITAXY
SECONDARY EMISSION
SEMIMETALS
SORPTION
665000* - Physics of Condensed Matter- (1992-)