skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: The linewidth of a mode-locked semiconductor laser caused by spontaneous emission: Experimental comparison to single-mode operation

Abstract

The authors experimentally compare the linewidth of the individual modes of an extended cavity semiconductor laser when it operates mode locked and when it operates single mode. They find that the linewidths under these two operating conditions have the same inverse dependence on the average power. Therefore, the coherence length of the mode-locked source is the same as that of the single-mode source despite lower power per mode, much broader total bandwidth, and much higher spontaneous emission noise level in the mode-locked source. It can be inferred from our data that the electric fields of over 1000 consecutive mode-locked pulses are correlated.

Authors:
; ;
Publication Date:
Research Org.:
Dept. of Electrical Engineering, Univ. of Maryland, College Park, MD 20742
OSTI Identifier:
7111516
Resource Type:
Journal Article
Journal Name:
IEEE J. Quant. Electron.; (United States)
Additional Journal Information:
Journal Volume: QE-22:11
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; LINE WIDTHS; MODE LOCKING; COHERENCE LENGTH; ELECTRIC FIELDS; LASER CAVITIES; NOISE; OPERATION; PULSES; RESEARCH PROGRAMS; STIMULATED EMISSION; DIMENSIONS; EMISSION; ENERGY-LEVEL TRANSITIONS; LASERS; LENGTH; SEMICONDUCTOR DEVICES; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Rush, D W, Burdge, G L, and Ho, P T. The linewidth of a mode-locked semiconductor laser caused by spontaneous emission: Experimental comparison to single-mode operation. United States: N. p., 1986. Web. doi:10.1109/JQE.1986.1072907.
Rush, D W, Burdge, G L, & Ho, P T. The linewidth of a mode-locked semiconductor laser caused by spontaneous emission: Experimental comparison to single-mode operation. United States. https://doi.org/10.1109/JQE.1986.1072907
Rush, D W, Burdge, G L, and Ho, P T. 1986. "The linewidth of a mode-locked semiconductor laser caused by spontaneous emission: Experimental comparison to single-mode operation". United States. https://doi.org/10.1109/JQE.1986.1072907.
@article{osti_7111516,
title = {The linewidth of a mode-locked semiconductor laser caused by spontaneous emission: Experimental comparison to single-mode operation},
author = {Rush, D W and Burdge, G L and Ho, P T},
abstractNote = {The authors experimentally compare the linewidth of the individual modes of an extended cavity semiconductor laser when it operates mode locked and when it operates single mode. They find that the linewidths under these two operating conditions have the same inverse dependence on the average power. Therefore, the coherence length of the mode-locked source is the same as that of the single-mode source despite lower power per mode, much broader total bandwidth, and much higher spontaneous emission noise level in the mode-locked source. It can be inferred from our data that the electric fields of over 1000 consecutive mode-locked pulses are correlated.},
doi = {10.1109/JQE.1986.1072907},
url = {https://www.osti.gov/biblio/7111516}, journal = {IEEE J. Quant. Electron.; (United States)},
number = ,
volume = QE-22:11,
place = {United States},
year = {Sat Nov 01 00:00:00 EST 1986},
month = {Sat Nov 01 00:00:00 EST 1986}
}