C-V characteristics of amorphous silicon nitride films prepared by hydrogen radical-assisted plasma chemical vapor deposition. [Capacitance-Voltage]

Journal Article · Tue Mar 01 00:00:00 EST 1994 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2054803· OSTI ID:7108291

Yasui, Kanji; Takahashi, Hisashi; Akahane, Tadashi ^[1]

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1. Nagoaka Univ. of Technology, Niigata (Japan). Dept. of Electronics

Hydrogen radicals were irradiated to the SiN-film-growing surface during radio frequency plasma deposition with SiH[sub 4] and NH[sub 3] gas mixture. The hydrogen radicals were generated by microwave plasma. The capacitance-voltage characteristics were measured to investigate the defects in SiN films and the SiN-Si interface. Effect of the hydrogen radical irradiation on the reduction of the defects responsible for the flatband voltage and the hysteresis voltage was investigated.

• OSTI ID: 7108291
• Journal Information: Journal of the Electrochemical Society; (United States), Vol. 141:3; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON NITRIDES
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
AMMONIA
INTERFACES
MICROWAVE RADIATION
SILANES
SILICON
VAPOR DEPOSITED COATINGS
CHEMICAL COATING
COATINGS
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
NITRIDES
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
360204 - Ceramics
Cermets
& Refractories- Physical Properties