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Title: Dopant and alloying effects in gamma irradiated GaAs light emitters

Abstract

Techniques for producing radiation hardening in GaAs light emitters by use of donor dopants and isovalent anion substitutional alloying are reported. Six different donor dopants, within the concentration range from 1 to 20 x 10/sup 17/ cm/sup -3/, were added to GaAs substrates. P-N light emitters were then fabricated and exposed to gamma irradiation from a /sup 60/Co source in steps to a total absorbed dose of 10/sup 8/ rads (Si). Results of the study are reported in terms of the damage parameter K/sub ..gamma../tau/sub o/ where K/sub ..gamma../ is the damage coefficient and tau/sub o/ is the preirradiated minority carrier lifetime. Selenium (Se) was the most effective dopant for hardening GaAs light emitters followed in order of decreasing effectiveness by Sn, Si (donor), Te, Ge (amphoteric), and Si (amphoteric). Two additional observations in this portion of the investigation also seemed to favor the use of Se for hardening: (1) The recovery of the emitters following isochronal annealing occurs in the sequence Se, Sn, Si, Te, and Ge, with the Se-doped samples showing the greatest annealing (to 60% of original quantum efficiency). (2) The shift of the peak emitting wavelength with irradiation (always toward shorter wavelengths) is found to bemore » least for the Se-doped samples. The second technique for hardening involved substituting the isovalent anion phosphorus (P) into the GaAs lattice in place of As. This action resulted in a lowering of the damage coefficient, K/sub ..gamma../, by several orders of magnitude as the P content increased to about 50%. At higher P concentrations (to 100% P), the coefficient remained constant at 0.27 (rad.s)/sup -1/. Irradiation caused a shift toward shorter peak emitter wavelengths for samples alloyed with less than about 20% P.« less

Authors:
 [1]; ; ;
  1. Harry Diamond Labs., Adelphi, MD
Publication Date:
OSTI Identifier:
7107339
Resource Type:
Conference
Journal Name:
IEEE Trans. Nucl. Sci.; (United States)
Additional Journal Information:
Journal Volume: NS-23:6; Conference: IEEE annual conference on nuclear and space radiation effects, San Diego, CA, USA, 27 Jul 1976
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; LIGHT EMITTING DIODES; RADIATION HARDENING; ADDITIVES; ALLOYS; CARRIER LIFETIME; CRYSTAL DOPING; FABRICATION; GALLIUM ARSENIDES; GAMMA RADIATION; GERMANIUM ADDITIONS; SILICON ADDITIONS; TELLURIUM ADDITIONS; TESTING; TIN ADDITIONS; ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; GERMANIUM ALLOYS; HARDENING; IONIZING RADIATIONS; LIFETIME; PHYSICAL RADIATION EFFECTS; PNICTIDES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON ALLOYS; TELLURIUM ALLOYS; TIN ALLOYS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems

Citation Formats

Epstein, A S, Share, S, Polimadei, R A, and Herzog, A H. Dopant and alloying effects in gamma irradiated GaAs light emitters. United States: N. p., 1976. Web.
Epstein, A S, Share, S, Polimadei, R A, & Herzog, A H. Dopant and alloying effects in gamma irradiated GaAs light emitters. United States.
Epstein, A S, Share, S, Polimadei, R A, and Herzog, A H. Wed . "Dopant and alloying effects in gamma irradiated GaAs light emitters". United States.
@article{osti_7107339,
title = {Dopant and alloying effects in gamma irradiated GaAs light emitters},
author = {Epstein, A S and Share, S and Polimadei, R A and Herzog, A H},
abstractNote = {Techniques for producing radiation hardening in GaAs light emitters by use of donor dopants and isovalent anion substitutional alloying are reported. Six different donor dopants, within the concentration range from 1 to 20 x 10/sup 17/ cm/sup -3/, were added to GaAs substrates. P-N light emitters were then fabricated and exposed to gamma irradiation from a /sup 60/Co source in steps to a total absorbed dose of 10/sup 8/ rads (Si). Results of the study are reported in terms of the damage parameter K/sub ..gamma../tau/sub o/ where K/sub ..gamma../ is the damage coefficient and tau/sub o/ is the preirradiated minority carrier lifetime. Selenium (Se) was the most effective dopant for hardening GaAs light emitters followed in order of decreasing effectiveness by Sn, Si (donor), Te, Ge (amphoteric), and Si (amphoteric). Two additional observations in this portion of the investigation also seemed to favor the use of Se for hardening: (1) The recovery of the emitters following isochronal annealing occurs in the sequence Se, Sn, Si, Te, and Ge, with the Se-doped samples showing the greatest annealing (to 60% of original quantum efficiency). (2) The shift of the peak emitting wavelength with irradiation (always toward shorter wavelengths) is found to be least for the Se-doped samples. The second technique for hardening involved substituting the isovalent anion phosphorus (P) into the GaAs lattice in place of As. This action resulted in a lowering of the damage coefficient, K/sub ..gamma../, by several orders of magnitude as the P content increased to about 50%. At higher P concentrations (to 100% P), the coefficient remained constant at 0.27 (rad.s)/sup -1/. Irradiation caused a shift toward shorter peak emitter wavelengths for samples alloyed with less than about 20% P.},
doi = {},
journal = {IEEE Trans. Nucl. Sci.; (United States)},
number = ,
volume = NS-23:6,
place = {United States},
year = {1976},
month = {12}
}

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