Aluminum arsenide eutectic gallium arsenide solar cell

Technical Report · Wed Dec 08 00:00:00 EST 1976

OSTI ID:7105769

Rahilly, W P

An improved gallium arsenide solar cell is provided by forming a P+ layer on top of a wafer of vertical PN junction eutectic gallium arsenide crystal by liquid phase epitaxial growth of P doped GaAs followed by liquid phase epitaxial growth at Al(x)AsGa(1-x) on the surface of the vertical PN junction substrate. The deposited GaAs layer with P dopant and the Al(x)AsGa(1-x) layer forms horizontal P-N junctions with the N-type vertical regions. An N+ region is formed on the solar cell backside by ion implantation of an N dopant followed by a pulse electron beam current of the implanted region.

• Research Organization: Department of the Air Force, Washington, DC (USA)
• OSTI ID: 7105769
• Report Number(s): AD-D-003501
• Resource Relation: Patent File Date: Filed date 8 Dec 1976
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
CRYSTAL GROWTH
EPITAXY
EUTECTICS
ION IMPLANTATION
P-N JUNCTIONS
SUBSTRATES
DIRECT ENERGY CONVERTERS
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
140501* - Solar Energy Conversion- Photovoltaic Conversion