GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition

Journal Article · Mon Mar 16 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98104· OSTI ID:7099530

Fekete, D; Bour, D; Ballantyne, J M; Eastman, L F

A self-aligned GaAs/GaAlAs tapered laser with a tapered quantum well active region is described. The laser is grown by low pressure metalorganic chemical vapor deposition in a horizontal reactor. The effect of the tapered quantum well is in concentrating the injected charges in the modal volume and thus 6.2 mA threshold current is obtained. At a high power level the laser operates in single longitudinal and transversal modes.

• Research Organization: School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, New York 14853
• OSTI ID: 7099530
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 50:11
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
FABRICATION
PERFORMANCE
EXPERIMENTAL DATA
ORGANOMETALLIC COMPOUNDS
POWER
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
ORGANIC COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE COATING
420300* - Engineering- Lasers- (-1989)