Current-voltage characteristics of thin-film diodes. Technical report, March--June 1965
The current-voltage (I-V) characteristics of thin-film diodes were measured at 4.2K, 77K, and room temperature. Superconductive tunneling was achieved with a diode consisting of aluminum, aluminum oxide, and lead Al-Al/sub 2/O/sub 3/-Pb. In the nonsuperconducting state the Al-Al/sub 2/O/sub 3/-Pb type of thin-film diode exhibited zener breakdown between 1.5 and 3.5 volts. However, the Al-Al/sub 2/O/sub 3/-Pb diodes did not have reproducible I-V characteristics, and the nonsuperconducting Al-Al/sub 2/O/sub 3/-Pb diode could not be operated with ac voltage long enough to serve as a practical electronic device. A thin-film diode consisting of aluminum, aluminum oxide, manganese, and lead exhibited power-law I-V characteristics at ambient temperatures, under 60-cycle excitation, and could be operated with a reproducible I-V characteristic for several hours. Bistable switching was achieved with a thin-film diode consisting of aluminum, aluminum oxide, lead, and aluminum; in this diode the short-circuit state was produced by a high-voltage pulse and the open-circuit state by a low-voltage pulse. A theoretical analysis of the observed I-V characteristic is presented.
- Research Organization:
- Naval Civil Engineering Lab., Port Hueneme, CA (USA)
- OSTI ID:
- 7095055
- Report Number(s):
- AD-630587; NCEL-TR-435
- Country of Publication:
- United States
- Language:
- English
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