High-performance InGaAsP/InP buried-heterostructure lasers and arrays defined by ion-beam-assisted etching

Technical Report · Mon May 02 00:00:00 EDT 1988

OSTI ID:7085600

Yap, D; Liau, Z L; Tsang, D Z; Walpole, J N

Ion-beam assisted etching was used to fabricate mass-transported InGaAsP/InP buried-heterostructure lasers. These lasers have a novel, deeply etched rectangular mesa that results in reduced current leakage. Both single-stripe lasers and Y-junction-coupled multiple-stripe laser arrays were demonstrated. The single-stripe lasers have 12-mA c-w threshold currents, differential quantum efficiencies of 32%-34% per facet, and smooth single-lobe far-field patterns. The multiple-stripe arrays lase in-phase with strong phase coherence.

• Research Organization: Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
• OSTI ID: 7085600
• Report Number(s): AD-A-194640/9/XAB; JA-6079
• Resource Relation: Other Information: Pub. in Applied Physics Letters, Vol. 52, No. 18, 1464-1466(2 May 1988)
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
HETEROJUNCTIONS
FABRICATION
SEMICONDUCTOR LASERS
CURRENTS
ETCHING
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
ION BEAMS
QUANTUM EFFICIENCY
REDUCTION
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHEMICAL REACTIONS
EFFICIENCY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)
420800 - Engineering- Electronic Circuits & Devices- (-1989)