Far-infrared photoconductivity of uniaxially stressed germanium

Journal Article · Sat Oct 15 00:00:00 EDT 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89755· OSTI ID:7083654

Kazanskii, A G; Richards, P L; Haller, E E

The influence of uniaxial stress on the extrinsic photoconductivity of gallium-doped germanium has been investigated. It has been found that the long-wavelength cutoff is shifted from 114 ..mu..m for zero stress to 200 ..mu..m for a uniaxial stress of 6.6 x 10/sup 3/ kg/cm/sup 2/ along a (100) direction. At this value of stress the responsivity was approx.2 x 10/sup 4/ V/W and the NEP was approx.2 x 10/sup -11/ W/Hz/sup 1/2/ at 190 ..mu..m.

• Research Organization: Department of Physics, University of California, and Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
• OSTI ID: 7083654
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 31:8
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
GE SEMICONDUCTOR DETECTORS
PHOTOCONDUCTIVITY
GERMANIUM
DOPED MATERIALS
FAR INFRARED RADIATION
GALLIUM
INFRARED SPECTRA
STRESSES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
INFRARED RADIATION
MEASURING INSTRUMENTS
METALS
PHYSICAL PROPERTIES
RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR DETECTORS
SPECTRA
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments
360603 - Materials- Properties