skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Laser diode technology and applications IV; Proceedings of the Meeting, Los Angeles, CA, Jan. 20-22, 1992

Conference ·
OSTI ID:7078065
 [1]
  1. Ortel Corp., Alhambra, CA (United States)

The proceedings contain material on high-power lasers, surface-emitting lasers, laser dynamics, visible and mid-IR semiconductor lasers, semiconductor laser reliability, strained-quantum-well lasers, materials and processes for semiconductor lasers, optoelectronic assembly and packaging, and semiconductor laser applications. Papers are presented on characteristics of active grating-surface-emitting amplified lasers; high-power CW operation of laser diodes with etched micromirrors; carrier transport effects in high-speed quantum-well lasers; high-power, 8.5-W, CW visible laser diodes; and highly reliable high-power AlGaAs lasers with window grown on facets. Attention is also given to InGaAs/GaAs/InGaP strained-layer quantum-well lasers grown by gas-source molecular beam epitaxy, laser-assisted etching to fabricate a buried continuous-graded cavity for unstable semiconductor laser diodes, use of microchannel cooling for high-power 2D laser diode arrays, stabilization of self-pulsating laser diodes, and a fiber bundles displacement measuring device.

OSTI ID:
7078065
Report Number(s):
CONF-920124-
Resource Relation:
Conference: Society of Photo-Optical Instrumentation Engineers (SPIE) international symposium on laser spectroscopy as part of SPIE's symposium on optics, electro-optics and laser applications in science and engineering, Los Angeles, CA (United States), 19-24 Jan 1992
Country of Publication:
United States
Language:
English