Process for forming one or more substantially pure layers in substrate material using ion implantation
A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. 2 figs.
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- US 4976987; A
- Application Number:
- PPN: US 7-391904
- OSTI ID:
- 7073224
- Resource Relation:
- Patent File Date: 10 Aug 1989
- Country of Publication:
- United States
- Language:
- English
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Process for forming one or more substantially pure layers in substrate material using ion implantation
Process for forming one or more substantially pure layers in substrate material using ion implantation