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Title: Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors

Abstract

The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi-insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements.

Authors:
; ;  [1]; ;  [2];  [3]
  1. Department of Nuclear Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)
  3. Soreq Nuclear Research Center, Israel Atomic Energy Commission, Yavne 70600 (Israel)
Publication Date:
OSTI Identifier:
7071792
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics; (United States)
Additional Journal Information:
Journal Volume: 75:12; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; CRYSTAL DEFECTS; RADIATION DETECTORS; ELECTRON CAPTURE; ELECTRIC FIELDS; IMPURITIES; SCHOTTKY BARRIER DIODES; ARSENIC COMPOUNDS; ARSENIDES; CAPTURE; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; 440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments; 360606 - Other Materials- Physical Properties- (1992-)

Citation Formats

McGregor, D S, Rojeski, R A, Knoll, G F, Terry, Jr, F L, East, J, and Eisen, Y. Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors. United States: N. p., 1994. Web. doi:10.1063/1.356577.
McGregor, D S, Rojeski, R A, Knoll, G F, Terry, Jr, F L, East, J, & Eisen, Y. Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors. United States. https://doi.org/10.1063/1.356577
McGregor, D S, Rojeski, R A, Knoll, G F, Terry, Jr, F L, East, J, and Eisen, Y. Wed . "Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors". United States. https://doi.org/10.1063/1.356577.
@article{osti_7071792,
title = {Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors},
author = {McGregor, D S and Rojeski, R A and Knoll, G F and Terry, Jr, F L and East, J and Eisen, Y},
abstractNote = {The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi-insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi-insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements.},
doi = {10.1063/1.356577},
url = {https://www.osti.gov/biblio/7071792}, journal = {Journal of Applied Physics; (United States)},
issn = {0021-8979},
number = ,
volume = 75:12,
place = {United States},
year = {1994},
month = {6}
}