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Title: Low-temperature formation of epitaxial Tl sub 2 Ca sub 2 Ba sub 2 Cu sub 3 O sub 10 thin films in reduced O sub 2 pressure

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.106515· OSTI ID:7071115
; ; ; ; ; ; ; ;  [1]
  1. IBM Almaden Research Center, San Jose, California 95120 (United States) Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185 (United States)

Epitaxial Tl{sub 2}Ca{sub 2}Ba{sub 2}Cu{sub 3}O{sub 10} films on (100) LaAlO{sub 3} are prepared by post-annealing 2Tl:2Ca:2Ba:3Cu precursor films at 830--860 {degree}C in {congruent}0.03--0.15 atm of O{sub 2}. These films (0.2--1.1 {mu}m thickness) are smooth and shiny to the eye, and have a sharp zero resistance and onset diamagnetic transition temperature of 117--121 K. Transport critical current densities of 1.6{times}10{sup 6} A/cm{sup 2} at 77 K and {congruent}10{sup 5} A/cm{sup 2} at 100 K are obtained for a 0.38-{mu}m-thick film in magnetic fields up to 100 Oe. Strong flux pinning at low temperatures is inferred from the weak-field dependence of the critical current density calculated from magnetic hysteresis loops. At 5 K, the best film has a magnetic critical current density of 9{times}10{sup 6} A/cm{sup 2} in zero field, decreasing gradually to 1.5{times}10{sup 6} A/cm{sup 2} in a 5-T field.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
7071115
Journal Information:
Applied Physics Letters; (United States), Vol. 60:6; ISSN 0003-6951
Country of Publication:
United States
Language:
English