Effect of implant temperature on dopant diffusion and defect morphology for Si implanted GaAs
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- Department of Materials Engineering, San Jose State University, San Jose, California 95192 (United States)
- Department of Materials Science, Stanford University, Stanford, California 94305 (United States)
- Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
Experimental observations of dopant diffusion and defect formation are reported as a function of implant temperature in Si implanted GaAs. The diffusion of Si during post-implant annealing decreases by a factor of 2.5 as the implant temperature increases from [minus]2 to 40 [degree]C. In this same temperature range, the maximum depth and density of extrinsic dislocation loops increase by factors of 3 and 4, respectively. Rutherford backscattering channeling measurements indicate that Si implanted GaAs undergoes an amorphous to crystalline transition at Si implant temperatures between [minus]51 and 40 [degree]C. A unified explanation of the effects of implant temperature on both diffusion and dislocation formation is proposed based on the known differences in sputter yields between crystalline and amorphous semiconductors. The model assumes that the sputter yield is enhanced by amorphization in the lower temperatures, thus increasing the excess vacancy concentration. Estimates of excess vacancy concentration are obtained by simulations of the diffusion profiles and are quantitatively consistent with a realistic sputter yield enhancement.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 7050339
- Journal Information:
- Journal of Applied Physics; (United States), Vol. 76:8; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
ION IMPLANTATION
AMORPHOUS STATE
ANNEALING
CRYSTAL DEFECTS
CRYSTALLIZATION
DIFFUSION
DISLOCATIONS
ION CHANNELING
SILICON ADDITIONS
VACANCIES
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CRYSTAL STRUCTURE
GALLIUM COMPOUNDS
HEAT TREATMENTS
LINE DEFECTS
PHASE TRANSFORMATIONS
PNICTIDES
POINT DEFECTS
SILICON ALLOYS
360606* - Other Materials- Physical Properties- (1992-)