Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0. 66--0. 68. mu. m at room temperatures

Journal Article · Thu Dec 01 00:00:00 EST 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332012· OSTI ID:7048722

Asahi, H; Kawamura, Y; Nagai, H

The room temperature pulsed operation of In/sub 0.49/Ga/sub 0.31/Al/sub 0.20/P/In/sub 0.49/Ga/sub 0.51//sub -x/ Al/sub x/P/In/sub 0.49/Ga/sub 0.31/Al/sub 0.20/P(x = 0.00--0.03) double heterostructure (DH) laser diodes have been achieved for the first time. The lasing wavelength was 0.66--0.68 ..mu..m with a threshold current density of 2.6--3.6 x 10/sup 4/A/cm/sup 2/ at 26 /sup 0/C. These results were achieved by growing DH wafers by molecular beam epitaxy (MBE). Key points in the successful MBE growth of these DH wafers were, first, the realization of low resistance p-type and n-type InGaAlP layers by reducing contamination in the growth chamber. This was done by installing a substrate loading room with an interlock valve and a substrate transfer mechanism. The second was the realization of an abrupt p-n junction by the use of Si instead of Sn as an n-type dopant.

• Research Organization: Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Atsugi-shi, Kanagawa 243-01, Japan
• OSTI ID: 7048722
• Journal Information: J. Appl. Phys.; (United States), Vol. 54:12
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PHOSPHORUS COMPOUNDS
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
OPERATION
VISIBLE RADIATION
HETEROJUNCTIONS
MEDIUM TEMPERATURE
PULSES
THRESHOLD ENERGY
ELECTROMAGNETIC RADIATION
ENERGY
EPITAXY
JUNCTIONS
LASERS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)