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Title: Method of forming an oxide superconducting thin film having an R sub 1 A sub 2 C sub 3 crystalline phase over an R sub 2 A sub 1 C sub 1 crystalline phase

Patent ·
OSTI ID:7048463

This patent describes a process which comprises forming a mixed rare earth alkaline earth copper oxide layer on a substrate and converting the mixed rare earth alkaline earth copper oxide layer to an electrically conductive layer. It comprises crystalline R{sub 1}A{sub 2}C{sub 3} oxide phase by heating in the presence of oxygen, wherein rare earth and R is in each instance chosen from among yttrium, lanthanum, samarium, europium, gadolinium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium and alkaline earth and A is in each instance chosen from among calcium, strontium and barium, characterized in that a crystalline R{sub 2}A{sub 1}C{sub 1} oxide phase is first formed as a layer on the substrate and the crystalline R{sub 1}A{sub 2}C{sub 3} oxide phase is formed over the crystalline R{sub 2}A{sub 1}C{sub 1} oxide phase by coating a mixed rare earth alkaline earth copper oxide on the crystalline R{sub 2}A{sub 1}C{sub 1} oxide phase and heating the mixed rare earth alkaline earth copper oxide to a temperature of at least 1000{degrees} C.

Assignee:
Eastman Kodak Co., Rochester, NY (United States)
Patent Number(s):
US 5116812; A
Application Number:
PPN: US 7-545164
OSTI ID:
7048463
Resource Relation:
Patent File Date: 27 Jun 1990
Country of Publication:
United States
Language:
English