Magnetron ion etching of InP using mixture of methane and hydrogen and its comparison with reactive ion etching
- British Telecom Research Labs., Ipswich (United Kingdom)
Magnetron ion etching (MIE) of InP has been studied using methane and hydrogen. These results of the first study are compared with those obtained with reactive ion etching (RIE) using the same gases in the same machine but without the magnet. The advantages of the MIE system demonstrated here include etching rates about three to four times higher and a lower degree of acceptor passivation (reduction in carrier concentration of etched surface), a low self-bias of between 70-200 V, and a resulting etched surface which is very smooth. Moreover, it is found that RIE and MIE give very similar degree of passivation depths, provided sample temperature during etching does not exceed 60C. However, MIE is favored because of higher etch rates. The degree of passivation in the MIE also depends on the percentage of methane used in the process. Anisotropic etching of InP with the MIE can be achieved under certain conditions of high pressure, but in conjunction with reduced etch rate and degraded surface morphology.
- OSTI ID:
- 7047987
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:4; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
INDIUM PHOSPHIDES
ETCHING
ACTIVATION ENERGY
DOPED MATERIALS
FABRICATION
HYDROGEN
IONS
MAGNETIC CONFINEMENT
MAGNETRONS
METHANE
MORPHOLOGY
PASSIVATION
ROUGHNESS
ZINC
ALKANES
CHARGED PARTICLES
CONFINEMENT
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
ENERGY
EQUIPMENT
HYDROCARBONS
INDIUM COMPOUNDS
MATERIALS
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NONMETALS
ORGANIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PLASMA CONFINEMENT
PNICTIDES
SURFACE FINISHING
SURFACE PROPERTIES
360601* - Other Materials- Preparation & Manufacture