Carbon removal from as-received Si samples in ultrahigh vacuum using ultraviolet light and an ozone beam

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585388· OSTI ID:7047981

Lenssinck, J M; Hoeven, A J; Loenen, E.J. van; Dijkkamp, D ^[1]

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1. Philips Research Labs., Eindhoven (Netherlands)

A novel Si-sample cleaning method is described. This low-temperature process uses ultraviolet (UV) radiation and an ozone beam to remove carbonaceous components from the native oxide of as-received Si samples. Because the cleaning process is implemented as an ultrahigh vacuum (UHV) process in a UHV process chamber, the sample does not need to be reexposed to atmospheric conditions between the carbon removal and the desorption of the native oxide, which results in very low contamination levels. The efficiency of this carbon removal-method is determined.

• OSTI ID: 7047981
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:4; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
SURFACE CLEANING
CARBON
EFFICIENCY
OZONE
SAMPLE PREPARATION
SURFACE TREATMENTS
ULTRAHIGH VACUUM
ULTRAVIOLET RADIATION
CLEANING
ELECTROMAGNETIC RADIATION
ELEMENTS
NONMETALS
RADIATIONS
SEMIMETALS
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture