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Title: Schottky enhancement of reacted NiAl/[ital n]-GaAs contacts

Abstract

Schottky enhancement of reacted NiAl/[ital n]-GaAs contacts was demonstrated experimentally. The Schottky barrier height increases from 0.83 eV for the [ital as]-deposited contacts to 0.96 eV when the contacts were annealed at 400 [degree]C for 1 min. Formation of a high Al content (Al,Ga)As layer at the interface upon annealing was rationalized in terms of a thermodynamic/kinetic model. A (200) dark field cross-sectional transmission electron microscopy image was used to show the presence of high Al content (Al,Ga)As at the interface.

Authors:
;  [1];  [2]
  1. (Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706 (United States))
  2. (Department of Chemical Engineering, University of Wisconsin-Madison, 1415 Johnson Drive, Madison, Wisconsin 53706 (United States))
Publication Date:
OSTI Identifier:
7044983
DOE Contract Number:  
FG02-86ER45274
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (United States)
Additional Journal Information:
Journal Volume: 64:25; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; SURFACE POTENTIAL; ALUMINIUM ALLOYS; ANNEALING; BINARY ALLOY SYSTEMS; CHEMICAL REACTIONS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; INTERFACES; N-TYPE CONDUCTORS; NICKEL ALLOYS; SCHOTTKY BARRIER DIODES; ALLOY SYSTEMS; ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; HEAT TREATMENTS; MATERIALS; MICROSCOPY; PHYSICAL PROPERTIES; PNICTIDES; POTENTIALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; 360606* - Other Materials- Physical Properties- (1992-); 360602 - Other Materials- Structure & Phase Studies

Citation Formats

Chen, C., Chang, Y.A., and Kuech, T.F. Schottky enhancement of reacted NiAl/[ital n]-GaAs contacts. United States: N. p., 1994. Web. doi:10.1063/1.111248.
Chen, C., Chang, Y.A., & Kuech, T.F. Schottky enhancement of reacted NiAl/[ital n]-GaAs contacts. United States. doi:10.1063/1.111248.
Chen, C., Chang, Y.A., and Kuech, T.F. Mon . "Schottky enhancement of reacted NiAl/[ital n]-GaAs contacts". United States. doi:10.1063/1.111248.
@article{osti_7044983,
title = {Schottky enhancement of reacted NiAl/[ital n]-GaAs contacts},
author = {Chen, C. and Chang, Y.A. and Kuech, T.F.},
abstractNote = {Schottky enhancement of reacted NiAl/[ital n]-GaAs contacts was demonstrated experimentally. The Schottky barrier height increases from 0.83 eV for the [ital as]-deposited contacts to 0.96 eV when the contacts were annealed at 400 [degree]C for 1 min. Formation of a high Al content (Al,Ga)As layer at the interface upon annealing was rationalized in terms of a thermodynamic/kinetic model. A (200) dark field cross-sectional transmission electron microscopy image was used to show the presence of high Al content (Al,Ga)As at the interface.},
doi = {10.1063/1.111248},
journal = {Applied Physics Letters; (United States)},
issn = {0003-6951},
number = ,
volume = 64:25,
place = {United States},
year = {1994},
month = {6}
}