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Title: Hot forming of silicon sheet, silicon sheet growth development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Final report, May 12, 1976--August 11, 1977

Technical Report ·
DOI:https://doi.org/10.2172/7043827· OSTI ID:7043827

Results of an experimental program investigating the hot workability of polytextuerystalline silicon are reported. Uniaxial stress-strain curves are given for strain rates in the range of 10/sup -5/ to 10/sup 1/ sec/sup -1/ and temperatures from 1100 to 1380/sup 0/C. At the highest strain rates at 1380/sup 0/C axial strains in excess of 20% were easily obtainable without cracking; although special preparation of the compression platens allows strains in excess of 50%. After deformations of 36%, recrystallization is completed within 0.1 hr at 1380/sup 0/C. When the recrystallization is ''complete,'' there is still a small volume fraction of unrecrystallized material which appears very stable and may degrade the electronic properties of the bulk material. Texture measurements show that the as-produced vapor deposited polycrystalline rods have a <110> fiber texture with the <110> direction parallel to the growth direction and no preferred orientation about this axis. Upon axial compression perpendicular to the growth direction the former <110> fiber axis changes to <111> and the compression axis becomes <110>. Recrystallization changes the texture to <110> along the former fiber axis and <100> along the compression axis.

Research Organization:
Univ. of Pennsylvania, Philadelphia, PA (United States)
Sponsoring Organization:
USDOE; Jet Propulsion Laboratory
DOE Contract Number:
NAS-7-100-954506
OSTI ID:
7043827
Report Number(s):
DOE/JPL/954506-1
Country of Publication:
United States
Language:
English