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Title: Born-approximation electron ionization cross sections for Al/sup n/+ (0< or =n< or =11) and some ions of the Na isoelectronic sequence

Abstract

Generalized oscillator strengths (GOS) for excitation and ionization of all occupied shells of Al/sup n/+ (0< or =n< or =11), and the Mg, Si, Ni, and Zn ions of the sodium isoelectronic sequence were calculated. The Al-ion GOS were used elsewhere to compute proton stopping power. There were no measurements or other calculations on stopping power with which to compare our calculations. Here the Al-ion GOS are used to calculate electron-ion ionization cross sections, including the effects of excitation followed by autoionization. The cross sections agree to 20% or better with measurements and other calculations, except near threshold. Calculations are also performed for five ions of the Na isoelectronic sequence to examine the relative importance of direct ionization versus excitation followed by autoionization. Comparison with recent measurements on three of these ions (Mg/sup 1 +/, Al/sup 2 +/, and Si/sup 3 +/) shows agreement to better than 10% in some cases, and no worse than 20% in any case.

Authors:
Publication Date:
Research Org.:
Sandia National Laboratories, Albuquerque, New Mexico 87185
OSTI Identifier:
7039979
Resource Type:
Journal Article
Journal Name:
Phys. Rev. A; (United States)
Additional Journal Information:
Journal Volume: 26:1
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; ALUMINIUM IONS; ELECTRON-ION COLLISIONS; STOPPING POWER; EXCITATION; IONIZATION; MAGNESIUM IONS; NICKEL IONS; SILICON IONS; ZINC IONS; BORN APPROXIMATION; CROSS SECTIONS; ISOELECTRONIC ATOMS; MULTICHARGED IONS; ATOMS; CHARGED PARTICLES; COLLISIONS; ELECTRON COLLISIONS; ENERGY-LEVEL TRANSITIONS; ION COLLISIONS; IONS; 640304* - Atomic, Molecular & Chemical Physics- Collision Phenomena

Citation Formats

McGuire, E J. Born-approximation electron ionization cross sections for Al/sup n/+ (0< or =n< or =11) and some ions of the Na isoelectronic sequence. United States: N. p., 1982. Web. doi:10.1103/PhysRevA.26.125.
McGuire, E J. Born-approximation electron ionization cross sections for Al/sup n/+ (0< or =n< or =11) and some ions of the Na isoelectronic sequence. United States. doi:10.1103/PhysRevA.26.125.
McGuire, E J. Thu . "Born-approximation electron ionization cross sections for Al/sup n/+ (0< or =n< or =11) and some ions of the Na isoelectronic sequence". United States. doi:10.1103/PhysRevA.26.125.
@article{osti_7039979,
title = {Born-approximation electron ionization cross sections for Al/sup n/+ (0< or =n< or =11) and some ions of the Na isoelectronic sequence},
author = {McGuire, E J},
abstractNote = {Generalized oscillator strengths (GOS) for excitation and ionization of all occupied shells of Al/sup n/+ (0< or =n< or =11), and the Mg, Si, Ni, and Zn ions of the sodium isoelectronic sequence were calculated. The Al-ion GOS were used elsewhere to compute proton stopping power. There were no measurements or other calculations on stopping power with which to compare our calculations. Here the Al-ion GOS are used to calculate electron-ion ionization cross sections, including the effects of excitation followed by autoionization. The cross sections agree to 20% or better with measurements and other calculations, except near threshold. Calculations are also performed for five ions of the Na isoelectronic sequence to examine the relative importance of direct ionization versus excitation followed by autoionization. Comparison with recent measurements on three of these ions (Mg/sup 1 +/, Al/sup 2 +/, and Si/sup 3 +/) shows agreement to better than 10% in some cases, and no worse than 20% in any case.},
doi = {10.1103/PhysRevA.26.125},
journal = {Phys. Rev. A; (United States)},
number = ,
volume = 26:1,
place = {United States},
year = {1982},
month = {7}
}