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Title: Microstructure of epitaxial VO[sub 2] thin films deposited on (11[bar 2]0) sapphire by MOCVD

Journal Article · · Journal of Materials Research; (United States)
; ; ;  [1]
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838 (United States)

Epitaxial VO[sub 2] thin films grown on (11[bar 2]0) sapphire ([alpha]--Al[sub 2]O[sub 3]) substrates by MOCVD at 600 [degree]C have been characterized by conventional electron microscopy and high resolution electron microscopy (HREM). Three different epitaxial relationships between the monoclinic VO[sub 2] films and sapphire substrates have been found at the room temperature: (I) (200)[010] monoclinic VO[sub 2]//(11[bar 2]0)[0001] sapphire; (II) (002)[010] monoclinic VO[sub 2]//(11[bar 2]0)[0001] sapphire; and (III) (020)[102] monoclinic VO[sub 2]//(11[bar 2]0)[0001] sapphire. Epitaxial relationships II and III are equivalent to each other when the film possesses tetragonal structure at the deposition temperature: i.e., they can be described as (010)[100] tetragonal VO[sub 2]//(11[bar 2]0)[0001] sapphire and (100)[010] tetragonal VO[sub 2]//(11[bar 2]0)[0001] sapphire. HREM image shows that the initial nucleation of the film was dominated by the first orientation relationship, but the film then grew into the grains of the second and the third (equivalent to each other at the deposition temperature) epitaxial relationships. Successive 90[degree] transformation rotational twins around the [ital a]-axis are commonly observed in the monoclinic films.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
7039903
Journal Information:
Journal of Materials Research; (United States), Vol. 9:9; ISSN 0884-2914
Country of Publication:
United States
Language:
English