Induced anisotropy in amorphous Sm-Co sputtered films
- Physics Department, Queens College of CUNY, Flushing, New York 11367 (United States)
The variation of the in-the-film-plane anisotropy constant, {ital K}{sub {ital u}}, with composition and the magnitude of the field, {ital H}{sub {ital s}}, applied in plane during the sputter deposition of amorphous Sm{sub {ital x}}Co{sub 1{minus}{ital x}}, 0.08{le}{ital x}{le}0.40, thin films has been studied. We demonstrate here that with a large {ital H}{sub {ital s}}, 5.0 kOe, a well defined and large in-the-film-plane anisotropy can be obtained. An exceptionally high value of {ital K}{sub {ital u}}=3.3{times}10{sup 6} erg/cm{sup 3} has been obtained. For the loop measured along the in-plane hard direction, the opening of the loop was undetectable, and the loop along the easy axis was a perfect rectangle. For certain conditions, the anisotropy field measured perpendicular to the film plane when corrected for demagnetization ({ital N}{sub {ital d}}=4{pi}) was the same as that for the in-plane measurements. It is concluded that surface induced short range ordering was the origin of the anisotropy observed in amorphous films deposited in a magnetic field. The formation mechanism is different from that of the short range ordering induced by field annealing.
- DOE Contract Number:
- FG02-86ER45265
- OSTI ID:
- 7039833
- Journal Information:
- Applied Physics Letters; (United States), Vol. 61:15; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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