Visible (657 nm) InGaP/InAlGaP strained quantum well vertical-cavity surface-emitting laser

Journal Article · Mon Apr 13 00:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.107178· OSTI ID:7038578

Schneider, Jr, R P; Bryan, R P; Lott, J A ^[1]; Olbright, G R ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
2. Photonics Research, Inc., Broomfield, Colorado 80021 (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber communication.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7038578
• Journal Information: Applied Physics Letters; (United States), Vol. 60:15; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
ALUMINIUM PHOSPHIDES
BRAGG REFLECTION
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
OPTICAL PUMPING
PERFORMANCE
TEMPERATURE RANGE 0273-0400 K
VAPOR PHASE EPITAXY
VISIBLE RADIATION
ALUMINIUM COMPOUNDS
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PUMPING
RADIATIONS
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
TEMPERATURE RANGE
426002* - Engineering- Lasers & Masers- (1990-)