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Title: Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys

Abstract

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, including the narrowest low-temperature photoluminescent linewidths reported for all of the In(Al{sub {ital y}}Ga{sub 1{minus}{ital y}})P alloys exhibiting direct band gaps (4.2 meV for InGaP).

Authors:
; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
Publication Date:
OSTI Identifier:
7038287
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics; (United States)
Additional Journal Information:
Journal Volume: 72:11; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM PHOSPHIDES; PHOTOLUMINESCENCE; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; LINE WIDTHS; MICROSTRUCTURE; VAPOR PHASE EPITAXY; ALUMINIUM COMPOUNDS; CRYSTAL STRUCTURE; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; 360606* - Other Materials- Physical Properties- (1992-)

Citation Formats

Schneider, Jr, R P, Jones, E D, Lott, J A, and Bryan, R P. Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys. United States: N. p., 1992. Web. doi:10.1063/1.352354.
Schneider, Jr, R P, Jones, E D, Lott, J A, & Bryan, R P. Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys. United States. doi:10.1063/1.352354.
Schneider, Jr, R P, Jones, E D, Lott, J A, and Bryan, R P. Tue . "Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys". United States. doi:10.1063/1.352354.
@article{osti_7038287,
title = {Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys},
author = {Schneider, Jr, R P and Jones, E D and Lott, J A and Bryan, R P},
abstractNote = {The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, including the narrowest low-temperature photoluminescent linewidths reported for all of the In(Al{sub {ital y}}Ga{sub 1{minus}{ital y}})P alloys exhibiting direct band gaps (4.2 meV for InGaP).},
doi = {10.1063/1.352354},
journal = {Journal of Applied Physics; (United States)},
issn = {0021-8979},
number = ,
volume = 72:11,
place = {United States},
year = {1992},
month = {12}
}