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Title: Chemical bath deposition of ZnSe and CuSe thin films using n,n-dimethylselenourea

Abstract

Chemical bath deposition techniques for ZnSe and CuSe thin films using N,N-dimethylselenourea as the source of selenide ion are presented. Films of 0.1 to 0.3 [mu]m in thickness of ZnSe and CuSe are obtained in 2 to 10 h depositions at 50 C. The ZnSe films possess optical bandgap [approximately]2.63 eV and suffer thermal degradation at temperatures >350 C. They are very resistive, with sheet resistance [approximately]10[sup 12] [Omega]/[open square] ([approximately]0.3 [mu]m film, 10 h deposition). The CuSe films have sheet resistance [approximately]10[sup 3] [Omega]/[open square] ([approximately]0.13 [mu]m, 3 h deposition) but undergo thermal degradation at temperature >200 C. Structure, composition, optical, and electrical characteristics of the films are discussed.

Authors:
; ;  [1]; ;  [2]
  1. (Texas A and M Univ., College Station, TX (United States). Dept. of Chemistry)
  2. (Univ. Nacional Autonoma de Mexico, Morelos (Mexico). Lab. de Energia Solar)
Publication Date:
OSTI Identifier:
7037222
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society; (United States)
Additional Journal Information:
Journal Volume: 141:3; Journal ID: ISSN 0013-4651
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; COPPER SELENIDES; CHEMICAL COATING; CHEMICAL COMPOSITION; ELECTRICAL PROPERTIES; MORPHOLOGY; OPTICAL PROPERTIES; ZINC SELENIDES; ELECTRIC CONDUCTIVITY; ORGANOMETALLIC COMPOUNDS; SELENIUM COMPOUNDS; UREA; AMIDES; CARBONIC ACID DERIVATIVES; CHALCOGENIDES; COPPER COMPOUNDS; DEPOSITION; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; SELENIDES; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS; 360600* - Other Materials; 400201 - Chemical & Physicochemical Properties

Citation Formats

Estrada, C.A., Zingaro, R.A., Meyers, E.A., Nair, P.K., and Nair, M.T.S. Chemical bath deposition of ZnSe and CuSe thin films using n,n-dimethylselenourea. United States: N. p., 1994. Web. doi:10.1149/1.2054814.
Estrada, C.A., Zingaro, R.A., Meyers, E.A., Nair, P.K., & Nair, M.T.S. Chemical bath deposition of ZnSe and CuSe thin films using n,n-dimethylselenourea. United States. doi:10.1149/1.2054814.
Estrada, C.A., Zingaro, R.A., Meyers, E.A., Nair, P.K., and Nair, M.T.S. Tue . "Chemical bath deposition of ZnSe and CuSe thin films using n,n-dimethylselenourea". United States. doi:10.1149/1.2054814.
@article{osti_7037222,
title = {Chemical bath deposition of ZnSe and CuSe thin films using n,n-dimethylselenourea},
author = {Estrada, C.A. and Zingaro, R.A. and Meyers, E.A. and Nair, P.K. and Nair, M.T.S.},
abstractNote = {Chemical bath deposition techniques for ZnSe and CuSe thin films using N,N-dimethylselenourea as the source of selenide ion are presented. Films of 0.1 to 0.3 [mu]m in thickness of ZnSe and CuSe are obtained in 2 to 10 h depositions at 50 C. The ZnSe films possess optical bandgap [approximately]2.63 eV and suffer thermal degradation at temperatures >350 C. They are very resistive, with sheet resistance [approximately]10[sup 12] [Omega]/[open square] ([approximately]0.3 [mu]m film, 10 h deposition). The CuSe films have sheet resistance [approximately]10[sup 3] [Omega]/[open square] ([approximately]0.13 [mu]m, 3 h deposition) but undergo thermal degradation at temperature >200 C. Structure, composition, optical, and electrical characteristics of the films are discussed.},
doi = {10.1149/1.2054814},
journal = {Journal of the Electrochemical Society; (United States)},
issn = {0013-4651},
number = ,
volume = 141:3,
place = {United States},
year = {1994},
month = {3}
}