The epitaxial growth of copper on the (111) surface of silicon
- Oak Ridge National Lab., TN (USA)
- Cornell Univ., Ithaca, NY (USA)
The progression of the epitaxy of Cu(111) on Si(111) has been studied using surface sensitive techniques and the as-grown film studied using high resolution transmission electron microscopy (HRTEM). A molecular beam epitaxy (MBE) system has been used to deposit films on 3-inch-diameter silicon substrates. Across this large area a graded thickness of 0 to 10 nm of copper was deposited and scanned using Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). For films grown at 373 K, silicon alloys with the copper up to a thickness of 2.5 nm, consistent with previous studies. LEED indicates an ordered R30{degree}-{radical}3 {times} {radical}3 Cu(111) surface which results from the alloying of copper and silicon. HRTEM images from the interface region show the alloy to be 2.0 nm thick, crystalline, and epitaxial to the Si(111) surface. There are indications that the interface alloy may be a metastable copper silicide. This alloy is important in the mechanism for the growth of Cu(111) on Si(111). 13 refs., 3 figs.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOD; DOE/ER
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 7025812
- Report Number(s):
- CONF-900466-72; ON: DE90013817; CNN: AFOSR-ISSA-89-0015
- Resource Relation:
- Journal Volume: 187; Conference: Spring meeting of the Materials Research Society, San Francisco, CA (USA), 16-21 Apr 1990
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER
MOLECULAR BEAM EPITAXY
COPPER SILICIDES
CRYSTAL STRUCTURE
INTERFACES
SILICON
TRANSMISSION ELECTRON MICROSCOPY
COPPER COMPOUNDS
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
METALS
MICROSCOPY
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360101* - Metals & Alloys- Preparation & Fabrication
656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)