Chemical vapor deposition (CVD) of thin films for electronic materials

Miscellaneous · Fri Jan 01 00:00:00 EST 1993

OSTI ID:7020437

Senzaki, Y

Chemical vapor deposition (CVD) is emerging as one of the most important techniques for the deposition of thin films used in microelectronics, semiconductors, superconductors, and protective coatings. This thesis is focused on the development of new organometallic precursors for the CVD of thin films for electronic applications. The relationship between the structure and decomposition mechanisms of precursors and the properties of deposited films is emphasized throughout the present study. Chapter I describes the use of stable and volatile precursors M(hfb)(CO)[sub 4] (M = Ru, Os; hfb = hexafluoro-2-butyne) for the deposition of ruthenium and osmium thin films. These precursors afford conductive metal dioxide thin films in the presence of oxygen. In addition, the gas phase synthesis of new compound M[sub 2][[mu]-[eta][sup 1]:[eta][sup 1]:[eta][sup 4]-C[sub 4](CF[sub 3])](CO)[sub 6] (M = Ru, Os) is reported, and the decomposition mechanism of the precursor is proposed. Chapter II an III include CVD of binary compound thin films such as III-V semiconductors and cobalt pnictides (CoAs and CoP). It is found that the combination of (t-Bu)[sub 2]EH and R[sub 3]N : MH[sub 3](M = Ga, Al; R[sub 3] = Me[sub 3], Me[sub 2]ET) provided polycrystalline GaAs, GaP, and AlAs. The NMR spectroscopic study of the pyrolysis of (t-Bu)[sub 2]AsH indicates that the formation of stable t-butyl radical is responsible for the relatively low deposition temperature (500[degrees]C). Molecular single-source precursor routes and two-source precursor methods, using Co[sub 2](CO)[sub 6]([eta]-E[sub 2]), CO(NO)(CO)[sub 2] [E(t-Bu)[sub 2]H], and the combination of Co(NO)(CO)[sub 3] and (t-Bu)[sub 2]EH (E = As, P), to grow CoAs and CoP thin films are compared. Lastly, laser-assisted CVD of micron-sized pure aluminum lines using a stable liquid precursor Me[sub 2]EtN:AlH[sub 3] is discussed in Chapter IV the selectivity of the deposition toward metal substrates is observed.

• Research Organization: Minnesota Univ., Minneapolis, MN (United States)
• OSTI ID: 7020437
• Resource Relation: Other Information: Thesis (Ph.D.)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
CHEMICAL VAPOR DEPOSITION
OSMIUM
PNICTIDES
RUTHENIUM
SEMICONDUCTOR MATERIALS
COBALT COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PRECURSOR
THIN FILMS
CHEMICAL COATING
DEPOSITION
ELEMENTS
FILMS
MATERIALS
METALS
ORGANIC COMPOUNDS
PLATINUM METALS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360601* - Other Materials- Preparation & Manufacture
360101 - Metals & Alloys- Preparation & Fabrication