Syntheses and single-crystal data of homologous compounds, In{sub 2}O{sub 3}(ZnO){sub m} (m = 3,4, and 5), InGaO{sub 3}(ZnO){sub 3}, and Ga{sub 2}O{sub 3}(ZnO){sub m} (m = 7,8,9, and 16) in the In{sub 2}O{sub 3}-ZnGa{sub 2}O{sub 4}-ZnO system

Journal Article · Sat Apr 01 00:00:00 EST 1995 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1006/jssc.1995.1198· OSTI ID:70193

Kimizuka, Noboru; Isobe, Mitsumasa; Nakamura, Masaki ^[1]

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1. National Institute for Research in Inorganic Materials, Ibaraki-ken (Japan)

Homologous compounds, In{sub 2}O{sub 3}(ZnO){sub m} (m {ge} 3), (InGaO{sub 3}){sub 2} ZnO, InGaO{sub 3}(ZnO){sub m} (m {ge} 1), and Ga{sub 2}O{sub 3}(ZnO){sub m} (m {ge} 7) phases (m = natural number) in the In{sub 2}O{sub 3}-ZnGa{sub 2}O{sub 4}-ZnO system were synthesized at 1150-1550{degrees}C from In{sub 2}O{sub 3}, Ga{sub 2}O{sub 3}, and ZnO powders. The homologous compounds with smaller m are synthesized as temperature is elevated higher. Single crystals of In{sub 2}O{sub 3}(ZnO){sub m} (m = 3,4, and 5), InGaO{sub 3}(ZnO){sub 3}, and Ga{sub 2}O{sub 3}(ZnO){sub m} (m {ge} 7,8,9, and 16) were grown by means of solid-state reactions in the mixtures of the starting compound powders with mixing ratio of In{sub 2}O{sub 3}:ZnO = 1:m at 1550{degrees}C, In{sub 2}O{sub 3}:Ga{sub 2}O{sub 3}:ZnO = 1:1:6 at 1550{degrees}C, and Ga{sub 2}O{sub 3}:ZnO = 1:m (in a mole ratio) at 1450-1550{degrees}C. The crystal data determined by means of a Weissenberg camera or a single-crystal X-ray diffractometer.

• OSTI ID: 70193
• Journal Information: Journal of Solid State Chemistry, Vol. 116, Issue 1; Other Information: PBD: Apr 1995
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM OXIDES
CRYSTAL STRUCTURE
ZINC OXIDES
GALLIUM OXIDES
CHEMICAL PREPARATION