skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Magnetic-field-dependent excitonic photoluminescence linewidth in In sub 0. 48 Ga sub 0. 52 P semiconductor alloys

Abstract

We report the observation of a magnetic-field-dependent excitonic photoluminescence linewidth in In{sub 0.48} Ga{sub 0.52}P semiconductor alloys (lattice matched to GaAs). The measurements were made at 1.4 K and the magnetic field ranged between 0 and 13.6 T. The photoluminescence peak energies ranged between 1.976 and 1.995 eV while the full width at half maximum linewidths varied from 4.3 to 6.0 meV. The linewidth variation is compared with several calculations which take into account the potential fluctuations caused by the disorder of the alloy components.

Authors:
;  [1]; ;  [2]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
  2. Department of Physics, Emory University, Atlanta, Georgia 30322 (United States)
Publication Date:
OSTI Identifier:
7017820
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter; (United States)
Additional Journal Information:
Journal Volume: 46:11; Journal ID: ISSN 0163-1829
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; LATTICE PARAMETERS; GALLIUM PHOSPHIDES; PHOTOLUMINESCENCE; INDIUM PHOSPHIDES; EXCITONS; FLUCTUATIONS; LINE WIDTHS; MAGNETIC FIELDS; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; THEORETICAL DATA; ARSENIC COMPOUNDS; ARSENIDES; DATA; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; LUMINESCENCE; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; QUASI PARTICLES; TEMPERATURE RANGE; VARIATIONS; 360606* - Other Materials- Physical Properties- (1992-); 360602 - Other Materials- Structure & Phase Studies

Citation Formats

Jones, E D, Schneider, Jr, R P, Lee, S M, and Bajaj, K K. Magnetic-field-dependent excitonic photoluminescence linewidth in In sub 0. 48 Ga sub 0. 52 P semiconductor alloys. United States: N. p., 1992. Web. doi:10.1103/PhysRevB.46.7225.
Jones, E D, Schneider, Jr, R P, Lee, S M, & Bajaj, K K. Magnetic-field-dependent excitonic photoluminescence linewidth in In sub 0. 48 Ga sub 0. 52 P semiconductor alloys. United States. doi:10.1103/PhysRevB.46.7225.
Jones, E D, Schneider, Jr, R P, Lee, S M, and Bajaj, K K. Tue . "Magnetic-field-dependent excitonic photoluminescence linewidth in In sub 0. 48 Ga sub 0. 52 P semiconductor alloys". United States. doi:10.1103/PhysRevB.46.7225.
@article{osti_7017820,
title = {Magnetic-field-dependent excitonic photoluminescence linewidth in In sub 0. 48 Ga sub 0. 52 P semiconductor alloys},
author = {Jones, E D and Schneider, Jr, R P and Lee, S M and Bajaj, K K},
abstractNote = {We report the observation of a magnetic-field-dependent excitonic photoluminescence linewidth in In{sub 0.48} Ga{sub 0.52}P semiconductor alloys (lattice matched to GaAs). The measurements were made at 1.4 K and the magnetic field ranged between 0 and 13.6 T. The photoluminescence peak energies ranged between 1.976 and 1.995 eV while the full width at half maximum linewidths varied from 4.3 to 6.0 meV. The linewidth variation is compared with several calculations which take into account the potential fluctuations caused by the disorder of the alloy components.},
doi = {10.1103/PhysRevB.46.7225},
journal = {Physical Review, B: Condensed Matter; (United States)},
issn = {0163-1829},
number = ,
volume = 46:11,
place = {United States},
year = {1992},
month = {9}
}