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Title: Method for measuring the drift mobility in doped semiconductors

Abstract

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

Inventors:
Publication Date:
Research Org.:
RCA Corp
OSTI Identifier:
7012006
Patent Number(s):
US 4319187; A
Application Number:
PPN: US 6-133253
Assignee:
RCA Corp., New York, NY (United States) OAK; EDB-94-122140
DOE Contract Number:
AC03-78ET21074
Resource Type:
Patent
Resource Relation:
Patent File Date: 24 Mar 1980
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; CARRIER MOBILITY; SOLAR CELLS; CHARGE CARRIERS; DOPED MATERIALS; HYDROGENATION; MEASURING METHODS; SEMICONDUCTOR MATERIALS; CHEMICAL REACTIONS; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; MATERIALS; MOBILITY; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360606 - Other Materials- Physical Properties- (1992-)

Citation Formats

Crandall, R.S. Method for measuring the drift mobility in doped semiconductors. United States: N. p., 1982. Web.
Crandall, R.S. Method for measuring the drift mobility in doped semiconductors. United States.
Crandall, R.S. Tue . "Method for measuring the drift mobility in doped semiconductors". United States. doi:.
@article{osti_7012006,
title = {Method for measuring the drift mobility in doped semiconductors},
author = {Crandall, R.S.},
abstractNote = {A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 09 00:00:00 EST 1982},
month = {Tue Mar 09 00:00:00 EST 1982}
}
  • A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.
  • A coupling device for connecting a first mobility platform to a second mobility platform in tandem. An example mobility platform is a robot. The coupling device has a loose link mode for normal steering conditions and a locking position, tight link mode for navigation across difficult terrain and across obstacles, for traversing chasms, and for navigating with a reduced footprint in tight steering conditions.
  • Ion mobility spectrometer apparatus may include an ion interface that is operable to hold positive and negative ions and to simultaneously release positive and negative ions through respective positive and negative ion ports. A first drift chamber is operatively associated with the positive ion port of the ion interface and encloses an electric field therein. A first ion detector operatively associated with the first drift chamber detects positive ions from the first drift chamber. A second drift chamber is operatively associated with the negative ion port of the ion interface and encloses an electric field therein. A second ion detectormore » operatively associated with the second drift chamber detects negative ions from said second drift chamber.« less
  • A method for raising the resolving power, specificity, and peak capacity of conventional ion mobility spectrometry is disclosed. Ions are separated in a dynamic electric field comprising an oscillatory field wave and opposing static field, or at least two counter propagating waves with different parameters (amplitude, profile, frequency, or speed). As the functional dependencies of mean drift velocity on the ion mobility in a wave and static field or in unequal waves differ, only single species is equilibrated while others drift in either direction and are mobility-separated. An ion mobility spectrum over a limited range is then acquired by measuringmore » ion drift times through a fixed distance inside the gas-filled enclosure. The resolving power in the vicinity of equilibrium mobility substantially exceeds that for known traveling-wave or drift-tube IMS separations, with spectra over wider ranges obtainable by stitching multiple segments. The approach also enables low-cutoff, high-cutoff, and bandpass ion mobility filters.« less
  • A fast neutron spectrometer was designed, which utilizes a pair of opposed detectors having a layer of /sup 6/LiF between to produce alpha and T pair for each neutron captured to provide signals, which, when combined, constitute a measure of neutron energy. (AEC)