Physical vapor deposition of cubic boron nitride thin films

Miscellaneous · Tue Jan 01 00:00:00 EST 1991

OSTI ID:7011712

Kester, D J

Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited.

• Research Organization: Pennsylvania State Univ., University Park, PA (United States)
• OSTI ID: 7011712
• Resource Relation: Other Information: Thesis (Ph.D.)
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
BORON NITRIDES
PHYSICAL VAPOR DEPOSITION
ARGON IONS
ENERGY BEAM DEPOSITION FILMS
ION BEAMS
NITROGEN IONS
PROCESS CONTROL
SPUTTERING
TEMPERATURE EFFECTS
VAPOR DEPOSITED COATINGS
BEAMS
BORON COMPOUNDS
CHARGED PARTICLES
COATINGS
CONTROL
DEPOSITION
FILMS
IONS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SURFACE COATING
665300* - Interactions Between Beams & Condensed Matter- (1992-)
360201 - Ceramics
Cermets
& Refractories- Preparation & Fabrication