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Title: Rapid thermal processing and screen-printing for low cost silicon solar cells

Abstract

Rapid and potentially low-cost process techniques are analyzed and applied toward the fabrication of high-efficiency Si solar cells. First, a high quality screen-printed (SP) contact methodology is developed that results in fill factors of 0.785-0.790 on monocrystalline Si. Next, aluminum back surface field (Al-BSF) formation is studied in detail to establish the process conditions that result in optimal BSF action. Screen-printing of Al conductor paste and rapid thermal processing (RTP) are integrated into the BSF procedure, and effective recombination velocities (S{sub eff}) as low as 200 cm/s are demonstrated on 2.3 {Omega}-cm Si with this RTP SP Al-BSF process. A novel passivation scheme consisting of a dielectric stack (plasma silicon nitride on top of a rapid thermal oxide) is developed to reduce the surface recombination velocity (S) to {approx}10 cm/s at the 1.3 {Omega}-cm Si surface. The important feature of this stack passivation scheme is its ability to withstand a high-temperature anneal (700{endash}850&hthinsp;{degree}C) without degradation in S. This feature is critical for most current commercial processes that utilize SP contact firing. Finally, the individual processes are integrated to form high-efficiency, manufacturable devices. Solar cell efficiencies of 17{percent} and {gt}19{percent} are achieved on FZ Si with SP and evaporated (photolithography) contacts,more » respectively. {copyright} {ital 1999 American Institute of Physics.}« less

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
700940
Report Number(s):
CONF-980935-
Journal ID: APCPCS; ISSN 0094-243X; TRN: 9915M0056
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 462; Journal Issue: 1; Conference: 15. National Center for Photovoltaics program review conference, Denver, CO (United States), 9-11 Sep 1998; Other Information: PBD: Mar 1999
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SOLAR CELLS; SILICON SOLAR CELLS; SILICON; FABRICATION; SCREEN PRINTING; HEAT TREATMENTS; ELECTRIC CONTACTS; PASSIVATION; FILL FACTORS; EFFICIENCY

Citation Formats

Rohatgi, A, Narasimha, S, Doshi, P, and Ebong, A. Rapid thermal processing and screen-printing for low cost silicon solar cells. United States: N. p., 1999. Web. doi:10.1063/1.57909.
Rohatgi, A, Narasimha, S, Doshi, P, & Ebong, A. Rapid thermal processing and screen-printing for low cost silicon solar cells. United States. doi:10.1063/1.57909.
Rohatgi, A, Narasimha, S, Doshi, P, and Ebong, A. Mon . "Rapid thermal processing and screen-printing for low cost silicon solar cells". United States. doi:10.1063/1.57909.
@article{osti_700940,
title = {Rapid thermal processing and screen-printing for low cost silicon solar cells},
author = {Rohatgi, A and Narasimha, S and Doshi, P and Ebong, A.},
abstractNote = {Rapid and potentially low-cost process techniques are analyzed and applied toward the fabrication of high-efficiency Si solar cells. First, a high quality screen-printed (SP) contact methodology is developed that results in fill factors of 0.785-0.790 on monocrystalline Si. Next, aluminum back surface field (Al-BSF) formation is studied in detail to establish the process conditions that result in optimal BSF action. Screen-printing of Al conductor paste and rapid thermal processing (RTP) are integrated into the BSF procedure, and effective recombination velocities (S{sub eff}) as low as 200 cm/s are demonstrated on 2.3 {Omega}-cm Si with this RTP SP Al-BSF process. A novel passivation scheme consisting of a dielectric stack (plasma silicon nitride on top of a rapid thermal oxide) is developed to reduce the surface recombination velocity (S) to {approx}10 cm/s at the 1.3 {Omega}-cm Si surface. The important feature of this stack passivation scheme is its ability to withstand a high-temperature anneal (700{endash}850&hthinsp;{degree}C) without degradation in S. This feature is critical for most current commercial processes that utilize SP contact firing. Finally, the individual processes are integrated to form high-efficiency, manufacturable devices. Solar cell efficiencies of 17{percent} and {gt}19{percent} are achieved on FZ Si with SP and evaporated (photolithography) contacts, respectively. {copyright} {ital 1999 American Institute of Physics.}},
doi = {10.1063/1.57909},
journal = {AIP Conference Proceedings},
number = 1,
volume = 462,
place = {United States},
year = {1999},
month = {3}
}