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Title: Influence of CdCl{sub 2} treatment on the electrical and optical properties of CdS thin film

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.57897· OSTI ID:700934
; ;  [1]; ;  [2]
  1. Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States)
  2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We have investigated the optical and electrical properties of the CdS films under a variety of the post-deposition annealing treatments. CdCl{sub 2}-treatment results in the decrease of the shallow defect density, the increase of the bandgap, the photoconductivity response, as well as the optical transmission in the wavelength range between 500 and 600 nm of the CdS films. While non-CdCl{sub 2}-treatment (annealed without CdCl{sub 2}) leads to the opposite results. Also, after coated with the CdTe films and annealed, CdCl{sub 2}-treated CdS films of the annealed CdS/CdTe films have higher photoconductivity response than the as-deposited CdS films of the annealed CdS/CdTe films. The role of CdCl{sub 2} in the post-treatment and the influence of the CdCl{sub 2} treatment on the CdTe/CdS cell performance is analyzed. {copyright} {ital 1999 American Institute of Physics.}

Sponsoring Organization:
USDOE
OSTI ID:
700934
Report Number(s):
CONF-980935-; ISSN 0094-243X; TRN: 9915M0031
Journal Information:
AIP Conference Proceedings, Vol. 462, Issue 1; Conference: 15. National Center for Photovoltaics program review conference, Denver, CO (United States), 9-11 Sep 1998; Other Information: PBD: Mar 1999
Country of Publication:
United States
Language:
English