de Haas{endash}van Alphen and Shubnikov{endash}de Haas oscillations in RAgSb{sub 2} (R=Y, La-Nd, Sm)
- Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)
- National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
de Haas{endash}van Alphen and Shubnikov{endash}de Haas oscillations have been used to study the Fermi surface of the simple tetragonal RAgSb{sub 2} series of compounds with R=Y, La-Nd, and Sm. The high quality of the flux-grown single crystals, coupled with very small extremal cross sections of Fermi surface, allow the observation of quantum oscillations at modest fields (H{lt}30&hthinsp;kG) and high temperatures (up to 25 K in SmAgSb{sub 2}). For H{parallel}c, the effective masses, determined from the temperature dependence of the amplitudes, are quite small, typically between 0.07 and 0.5m{sub 0}. The topology of the Fermi surface was determined from the angular dependence of the frequencies for R=Y, La, and Sm. In SmAgSb{sub 2}, antiferromagnetic ordering below 8.8 K is shown to dramatically alter the Fermi surface. For LaAgSb{sub 2} and CeAgSb{sub 2}, the effect of applied hydrostatic pressure on the frequencies was also studied. Finally, the experimental data were compared to the Fermi surface calculated within the tight-binding linear muffin-tin orbital approximation. Overall, the calculated electronic structure was found to be consistent with the experimental data. {copyright} {ital 1999} {ital The American Physical Society}
- OSTI ID:
- 698845
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 60, Issue 19; Other Information: PBD: Nov 1999
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
LANTHANUM COMPOUNDS
PRASEODYMIUM COMPOUNDS
FERMI LEVEL
YTTRIUM COMPOUNDS
LANTHANUM CARBIDES
NEODYMIUM COMPOUNDS
SAMARIUM COMPOUNDS
SILVER COMPOUNDS
ANTIMONIDES
SHUBNIKOV-DE HAAS EFFECT
DE HAAS-VAN ALPHEN EFFECT
EFFECTIVE MASS
TEMPERATURE DEPENDENCE
ELECTRONIC STRUCTURE
MUFFIN-TIN POTENTIAL