Oxidized Al{sub x}Ga{sub 1{minus}x}As heterostructure planar waveguides
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556-5637 (United States)
- Metricon Corporation, P.O. Box 63, Pennington, New Jersey 08534 (United States)
- Sandia National Laboratory, P.O. Box 0603, Albuquerque, New Mexico 87185-0603 (United States)
Waveguiding by total internal reflection is demonstrated within Al{sub x}Ga{sub 1{minus}x}As semiconductor heterostructures which have been fully oxidized in water vapor at {approximately}490&hthinsp;{degree}C. Refractive index, mode propagation constant, propagation loss ({le}3&hthinsp;cm{sup {minus}1}) at {lambda}{sub 0}=1.3 and 1.55 {mu}m, secondary ion mass spectrometry depth profile, and Fourier transform infrared transmission spectra measurements are presented to characterize a multimode single-heterostructure oxide waveguide. An index contrast of {Delta}n=0.06 is observed between oxidized x=0.4 and x=0.8 Al{sub x}Ga{sub 1{minus}x}As oxide layers. Absorption loss at 1.55 {mu}m is observed due to OH groups. Near-field images are presented showing waveguiding in a single-mode oxide double heterostructure. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 698826
- Journal Information:
- Applied Physics Letters, Vol. 75, Issue 20; Other Information: PBD: Nov 1999
- Country of Publication:
- United States
- Language:
- English
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