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Title: Patterning a 50-nm period grating using soft x-ray spatial frequency multiplication

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
DOI:https://doi.org/10.1116/1.587632· OSTI ID:6987630
; ;  [1];  [2]
  1. Center for X-Ray Optics, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States) Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
  2. Center for X-Ray Optics, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

Soft x-ray spatial frequency multiplication is a technique that has the capability of reducing by a factor of 2 or more the finest period grating that can be written by other methods. We describe two geometries for this technique: a single-grating geometry that requires spatially coherent illumination, and a two-grating geometry that can be used with incoherent illumination. Starting with a parent grating of period [ital p] and area [ital A], gratings of period [ital p]/2, [ital p]/4, [ital p]/6 over an area [ital A]/3, [ital A]/5, [ital A]/7, respectively, can be printed in the single-grating geometry. The two-grating geometry produces the same final grating periods for parent gratings of period [ital p], but the final grating area is limited only by the sizes of the parent gratings. As an initial demonstration of this technique, we have used the single-grating geometry to pattern a 50-nm period grating in polymethylmethacrylate over an area of 30 [mu]m[times]100 [mu]m, starting with a 100-nm period parent grating with an area of 90 [mu]m[times]100 [mu]m. The x-ray source was a synchrotron undulator at [lambda]=18 A and required a 5-min exposure time. Recent developments in coherent radiation from x-ray undulator sources will give shorter exposure times and permit larger areas to be patterned in the single-grating geometry.

OSTI ID:
6987630
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 12:6; ISSN 0734-211X
Country of Publication:
United States
Language:
English