Field-assisted bonding below 200 /sup 0/C using metal and glass thin-film interlayers
Bonding between similar or dissimilar surfaces with metal and glass thin-film interlayers as well as bulk glass plates using an electric field assisted bonding technique at 160 /sup 0/C or less is described. This low-temperature field-assisted bonding is achieved using, e.g., few ..mu..m thick glass films rf magnetron sputter deposited from Na or Li silicate glasses, and 0.05--1.0 ..mu..m thick Al, Sn, Mg, and Hf films. The bond strength thus achieved is found to be greater than the cohesive strength of the glass used. Results from x-ray photoelectron spectroscopy analyses confirm the migration across the glass layer and the plating out on the cathode surfaces of mobile ions such as Na/sup +/ or Li/sup +/ during field-assisted bonding. The migration and plating out of mobile ions can be detected in 10 s after the potential is applied and whether actual bonding between the metal and glass occurs or not. The possible bonding mechanism based on these XPS results is proposed.
- Research Organization:
- IBM Almaden Research Center, San Jose, California 95120
- OSTI ID:
- 6986709
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 50:9
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM
BONDING
GLASS
CHARGED-PARTICLE TRANSPORT
HAFNIUM
LITHIUM IONS
MIGRATION
MAGNESIUM
SODIUM IONS
TIN
ADHESION
INTERFACES
MEDIUM TEMPERATURE
ALKALINE EARTH METALS
CHARGED PARTICLES
ELEMENTS
FABRICATION
IONS
JOINING
METALS
RADIATION TRANSPORT
TRANSITION ELEMENTS
360101* - Metals & Alloys- Preparation & Fabrication