High-efficiency thin-film silicon-on-gap solar cell for improved radiation resistance. Final report, July 1986-February 1987

Technical Report · Tue Sep 01 00:00:00 EDT 1987

OSTI ID:6981807

Culik, J S

The ultimate high-efficiency silicon solar cell is a light-trapping thin-film silicon structure epitaxially grown on an oxide overcoated substrate such as silicon or gallium phosphide (GaP). In addition to high performance, this thin-base silicon device is more tolerant of radiation effects than a thick-base solar cell because this structure is less sensitive to reductions in minority-carrier diffusion length. The oxide overcoating layer, an integral part of this design, will serve as a dielectric back surface reflector leading to light trapping, and it will also eliminate dangling bonds in the overgrown silicon layer, effectively passivating the silicon-oxide interface and reducing back-surface recombination.

• Research Organization: Astrosystems International, Inc., Newark, DE (USA). Astropower Div.
• OSTI ID: 6981807
• Report Number(s): AD-A-190268/3/XAB
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
EFFICIENCY
PHYSICAL RADIATION EFFECTS
CHARGE CARRIERS
COATINGS
DIFFUSION
GALLIUM PHOSPHIDES
LAYERS
OXIDES
PROGRESS REPORT
SENSITIVITY
SILICON
SUBSTRATES
SURFACES
TOLERANCE
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
ELEMENTS
EQUIPMENT
GALLIUM COMPOUNDS
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
RADIATION EFFECTS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion