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Title: Ferromagnetic. delta. -Mn sub 1 minus x Ga sub x thin films with perpendicular anisotropy

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.108245· OSTI ID:6978902
 [1]
  1. Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

We report the structure and properties of the thermodynamically stable {delta}-phase Mn{sub 1{minus}{ital x}}Ga{sub {ital x}} single crystal thin films grown on GaAs. X-ray {Theta}--2{Theta} scans and grazing-incidence scattering measurements confirmed that the unit cell of this phase is tetragonal ({ital a}=0.279 nm, {ital c}=0.351 nm) and grows with the {ital c}-axis oriented normal to the {l brace}001{r brace} GaAs substrate surface. X-ray emission spectroscopy confirmed the composition to be 62{plus minus}2% Mn. Polar Kerr rotation, SQUID and vibrating sample magnetometer measurements with the field applied along the thin-film normal showed nearly perfect square hysteresis loops confirming perpendicular anisotropy of the films. The film exhibits a Kerr rotation angle of {similar to}0.1{degree} at 820 nm, a coercivity of 6.27 kOe and a saturation magnetization of 460 emu/cm{sup 3}. The optical reflectivity of the film was 65%--70% over a broad range of wavelengths. This unique set of properties make it a very promising material for magneto-optic recording with the additional potential of integrating semiconductor/magnetic devices by suitable patterning techniques.

DOE Contract Number:
AC03-76SF00098
OSTI ID:
6978902
Journal Information:
Applied Physics Letters; (United States), Vol. 61:19; ISSN 0003-6951
Country of Publication:
United States
Language:
English