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Title: Characterization of Pb(Zr,Ti)O/sub 3/ thin films deposited from multielement metal targets

Abstract

Lead zirconate titanate (Pb(Zr,Ti)O/sub 3/ or PZT) thin films have been grown by sputtering a multi-element metal target in oxygen using dc planar magnetron sputtering. Growth parameters and annealing conditions have been optimized. The kinetics of reactive sputtering and the implications of sputtering parameters on film composition have been studied. The studies reveal the requirement for operation at low substrate temperatures (200 /sup 0/C), high sputtering pressures (4--5 Pa), and a large substrate-to-target distance (10 cm) for obtaining good control over composition. The structural and electrical properties of films were found to depend on the compositional ratio of Zr/Ti, similar to that observed in bulk PZT ceramics. Films having a resistivity of 10/sup 10/ ..cap omega.. cm and a dielectric constant epsilon'approx.820 at room temperature (300 K) have been achieved. Ferroelectric hysteresis loop measurements indicated a remanent polarization of 30.0 ..mu..C/cm/sup 2/ and coercive field of 25 kV/cm for the rhombohedral phase composition (Zr/Ti = 58/42). Piezoelectric activity in the films is reported for the first time, through the fabrication of a surface-acoustic-wave delay line on a poled polycrystalline PZT thin film.

Authors:
;
Publication Date:
Research Org.:
Department of Physics, Queen's University, Kingston, Ontario K7L3N6, Canada
OSTI Identifier:
6976713
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 64:3
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LEAD ALLOYS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; TITANATES; ZIRCONATES; ENERGY BEAM DEPOSITION; OXIDATION; PIEZOELECTRICITY; SPUTTERING; THIN FILMS; ALLOYS; CHEMICAL REACTIONS; DEPOSITION; ELECTRICAL PROPERTIES; ELECTRICITY; FILMS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS; 360202* - Ceramics, Cermets, & Refractories- Structure & Phase Studies

Citation Formats

Sreenivas, K, and Sayer, M. Characterization of Pb(Zr,Ti)O/sub 3/ thin films deposited from multielement metal targets. United States: N. p., 1988. Web. doi:10.1063/1.341822.
Sreenivas, K, & Sayer, M. Characterization of Pb(Zr,Ti)O/sub 3/ thin films deposited from multielement metal targets. United States. https://doi.org/10.1063/1.341822
Sreenivas, K, and Sayer, M. 1988. "Characterization of Pb(Zr,Ti)O/sub 3/ thin films deposited from multielement metal targets". United States. https://doi.org/10.1063/1.341822.
@article{osti_6976713,
title = {Characterization of Pb(Zr,Ti)O/sub 3/ thin films deposited from multielement metal targets},
author = {Sreenivas, K and Sayer, M},
abstractNote = {Lead zirconate titanate (Pb(Zr,Ti)O/sub 3/ or PZT) thin films have been grown by sputtering a multi-element metal target in oxygen using dc planar magnetron sputtering. Growth parameters and annealing conditions have been optimized. The kinetics of reactive sputtering and the implications of sputtering parameters on film composition have been studied. The studies reveal the requirement for operation at low substrate temperatures (200 /sup 0/C), high sputtering pressures (4--5 Pa), and a large substrate-to-target distance (10 cm) for obtaining good control over composition. The structural and electrical properties of films were found to depend on the compositional ratio of Zr/Ti, similar to that observed in bulk PZT ceramics. Films having a resistivity of 10/sup 10/ ..cap omega.. cm and a dielectric constant epsilon'approx.820 at room temperature (300 K) have been achieved. Ferroelectric hysteresis loop measurements indicated a remanent polarization of 30.0 ..mu..C/cm/sup 2/ and coercive field of 25 kV/cm for the rhombohedral phase composition (Zr/Ti = 58/42). Piezoelectric activity in the films is reported for the first time, through the fabrication of a surface-acoustic-wave delay line on a poled polycrystalline PZT thin film.},
doi = {10.1063/1.341822},
url = {https://www.osti.gov/biblio/6976713}, journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 64:3,
place = {United States},
year = {Mon Aug 01 00:00:00 EDT 1988},
month = {Mon Aug 01 00:00:00 EDT 1988}
}