Influence of fast neutrons on electrical properties in neutron transmutation doped GaAs: New annealing stage

Journal Article · Mon Mar 09 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98141· OSTI ID:6972424

Satoh, M; Kuriyama, K; Yahagi, M; Iwamura, K; Kim, C; Kawakubo, T; Yoneda, K; Kimura, I

In neutron transmutation doping (NTD) to the undoped semi-insulating GaAs, a new annealing stage related to the tunneling assisted hopping conduction was found around 400 /sup 0/C for fast neutron fluences of greater than or equal to7.0 x 10/sup 17/ n/cm/sup 2/. It is suggested that this stage is based on the enhancement in the hopping conduction by the activated dopant in the NTD process. The stage was not observed for the irradiation with a small amount of fast neutrons. The activation energy for the annihilation of As antisite defects (As/sub Ga/) was found to be 0.9 eV. The annealing temperature to achieve the desired carried concentration increased with the fast neutron fluence.

• Research Organization: College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan
• OSTI ID: 6972424
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 50:10
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
ACTIVATION ENERGY
ANNEALING
CARRIER DENSITY
CRYSTAL DEFECTS
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
HIGH TEMPERATURE
NEUTRON FLUENCE
NEUTRONS
TRANSMUTATION
TUNNEL EFFECT
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ENERGY
FERMIONS
GALLIUM COMPOUNDS
HADRONS
HEAT TREATMENTS
NUCLEONS
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
360605* - Materials- Radiation Effects