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Title: Oxide semiconductor silicon heterojunction cells. Final progress report, September 17, 1976-November 16, 1977

Abstract

A 12.2% efficient solar cell has been fabricated by the ion-beam sputter deposition of degenerate n-type indium tin oxide (ITO) on p-type 1-2 ohm-cm silicon. The model chosen for these cells is an MIS/SIS structure. Indium tin oxide (ITO) transparent thin films on p-type silicon heterojunction photodiodes have been analyzed. The dark current of these non-idealized diodes, which is a function of temperature, is found to be related to tunneling mechanism. Capacitance-voltage analysis shows there is a relatively high trap concentration in the interfacial layer. Measurements of current-voltage characteristics and spectral response are studied by using a 150W xenon arc lamp with infrared filter as a source. Temperature effects on photodiode parameters are investigated from 200/sup 0/K to 400/sup 0/K. Results are closely related to the properties of p-n junction silicon photodiodes. The Auger technique is shown to be useful in quality control of cells since it was used to monitor contamination within the solar cell. Contamination severely degrades the solar cell performance and Auger helped to identify its sources in order that contamination could be eliminated. Detection of SiO/sub 2/ at the ITO/Si interface was accomplished by comparing the Si LMM lines of ultrathin Si oxides to those takenmore » while sputter profiling through the ITO/Si interface. SiO/sub 2/ was found at the interface of all cells examined and there seems to be a correlation between the oxide thickness and the solar cell performance. Thus efficient ITO/Si devices behave as induced junction (inversion layer) SIS diodes.« less

Authors:
Research Org.:
Colorado State Univ., Fort Collins (USA)
OSTI Identifier:
6971311
Report Number(s):
DOE/ET/20434-1
ON: DE82021160
DOE Contract Number:  
AC03-76ET20434
Resource Type:
Technical Report
Resource Relation:
Other Information: Portions of document are illegible
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; FABRICATION; PERFORMANCE; AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; CONTAMINATION; EFFICIENCY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EXPERIMENTAL DATA; HETEROJUNCTIONS; INDIUM OXIDES; INTERFACES; LIGHT TRANSMISSION; MIS SOLAR CELLS; QUANTUM EFFICIENCY; SILICON OXIDES; SPECTRAL RESPONSE; SPUTTERING; TEMPERATURE EFFECTS; TIN OXIDES; TRAPS; CHALCOGENIDES; CURRENTS; DATA; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; EQUIPMENT; INDIUM COMPOUNDS; INFORMATION; JUNCTIONS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; SPECTROSCOPY; TIN COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Dubow, J.B. Oxide semiconductor silicon heterojunction cells. Final progress report, September 17, 1976-November 16, 1977. United States: N. p., Web.
Dubow, J.B. Oxide semiconductor silicon heterojunction cells. Final progress report, September 17, 1976-November 16, 1977. United States.
Dubow, J.B. . "Oxide semiconductor silicon heterojunction cells. Final progress report, September 17, 1976-November 16, 1977". United States.
@article{osti_6971311,
title = {Oxide semiconductor silicon heterojunction cells. Final progress report, September 17, 1976-November 16, 1977},
author = {Dubow, J.B.},
abstractNote = {A 12.2% efficient solar cell has been fabricated by the ion-beam sputter deposition of degenerate n-type indium tin oxide (ITO) on p-type 1-2 ohm-cm silicon. The model chosen for these cells is an MIS/SIS structure. Indium tin oxide (ITO) transparent thin films on p-type silicon heterojunction photodiodes have been analyzed. The dark current of these non-idealized diodes, which is a function of temperature, is found to be related to tunneling mechanism. Capacitance-voltage analysis shows there is a relatively high trap concentration in the interfacial layer. Measurements of current-voltage characteristics and spectral response are studied by using a 150W xenon arc lamp with infrared filter as a source. Temperature effects on photodiode parameters are investigated from 200/sup 0/K to 400/sup 0/K. Results are closely related to the properties of p-n junction silicon photodiodes. The Auger technique is shown to be useful in quality control of cells since it was used to monitor contamination within the solar cell. Contamination severely degrades the solar cell performance and Auger helped to identify its sources in order that contamination could be eliminated. Detection of SiO/sub 2/ at the ITO/Si interface was accomplished by comparing the Si LMM lines of ultrathin Si oxides to those taken while sputter profiling through the ITO/Si interface. SiO/sub 2/ was found at the interface of all cells examined and there seems to be a correlation between the oxide thickness and the solar cell performance. Thus efficient ITO/Si devices behave as induced junction (inversion layer) SIS diodes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {},
month = {}
}

Technical Report:
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