Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

Yang, Y J; Dziura, T G; Wang, S C; Hsin, W; Wang, S

doi:10.1063/1.103063

Title: Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

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Abstract

We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2--0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2--4 {mu}m diameter active region formed by chemical selective etching, and sandwiched between two Al{sub 0.05}Ga{sub 0.95} As/ Al{sub 0.53}Ga{sub 0.47} As distributed Bragg reflectors of very high reflectivity (98--99%) grown by metalorganic chemical vapor deposition.

Authors:

Yang, Y J; Dziura, T G; Wang, S C ^[1]; Hsin, W; Wang, S ^[2]

Lockheed Palo Alto Research Laboratory, 3251 Hanover Street, Palo Alto, California 94304 (USA)
Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA (USA) Electronics Research Laboratory, University of California, Berkeley, California 94720 (USA)

Publication Date:: Mon May 07 00:00:00 EDT 1990

OSTI Identifier:: 6970840

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters; (USA)

Additional Journal Information:: Journal Volume: 56:19; Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; SEMICONDUCTOR LASERS; OPERATION; ALUMINIUM ARSENIDES; CHEMICAL VAPOR DEPOSITION; DESIGN; EFFICIENCY; FABRICATION; GALLIUM ARSENIDES; THRESHOLD CURRENT; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; CURRENTS; DEPOSITION; ELECTRIC CURRENTS; GALLIUM COMPOUNDS; LASERS; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SURFACE COATING; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats


                    Yang, Y J, Dziura, T G, Wang, S C, Hsin, W, and Wang, S. Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser.  United States: N. p., 1990. 
        Web.  doi:10.1063/1.103063.

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                    Yang, Y J, Dziura, T G, Wang, S C, Hsin, W, & Wang, S. Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser.  United States.  https://doi.org/10.1063/1.103063

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                    Yang, Y J, Dziura, T G, Wang, S C, Hsin, W, and Wang, S. 1990.  
        "Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser".  United States.  https://doi.org/10.1063/1.103063.

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@article{osti_6970840,

  title        = {Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser},

  author       = {Yang, Y J and Dziura, T G and Wang, S C and Hsin, W and Wang, S},

  abstractNote = {We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2--0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2--4 {mu}m diameter active region formed by chemical selective etching, and sandwiched between two Al{sub 0.05}Ga{sub 0.95} As/ Al{sub 0.53}Ga{sub 0.47} As distributed Bragg reflectors of very high reflectivity (98--99%) grown by metalorganic chemical vapor deposition.},

  doi          = {10.1063/1.103063},

  url          = {https://www.osti.gov/biblio/6970840},
  journal      = {Applied Physics Letters; (USA)},

  issn         = {0003-6951},

  number       = ,

  volume       = 56:19,

  place        = {United States},

  year         = {Mon May 07 00:00:00 EDT 1990},

  month        = {Mon May 07 00:00:00 EDT 1990}

}

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