Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definition

Journal Article · Mon Jun 11 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102923· OSTI ID:6970757

Orenstein, M; Lehmen, A C.V.; Chang-Hasnain, C; Stoffel, N G; Harbison, J P; Florez, L T; Clausen, E; Jewell, J E ^[1]

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1. Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701 (US)

A planarity preserving method for the definition of vertical-cavity surface-emitting lasers (VC-SEL) is described. A strained-layer InGaAs quantum well VC-SEL structure was grown and lasers were laterally defined using a tailored deep proton implantation process. In these lasers we obtained low threshold current densities of 1000 A/cm{sup 2} and efficient cw operation. This method facilitates large-scale integration of VC-SEL devices.

• OSTI ID: 6970757
• Journal Information: Applied Physics Letters; (USA), Vol. 56:24; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
DESIGN
ION IMPLANTATION
LASER CAVITIES
LASER MATERIALS
LASER MIRRORS
MOLECULAR BEAM EPITAXY
THRESHOLD CURRENT
CURRENTS
ELECTRIC CURRENTS
EPITAXY
LASERS
MATERIALS
MIRRORS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)