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Title: Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definition

Abstract

A planarity preserving method for the definition of vertical-cavity surface-emitting lasers (VC-SEL) is described. A strained-layer InGaAs quantum well VC-SEL structure was grown and lasers were laterally defined using a tailored deep proton implantation process. In these lasers we obtained low threshold current densities of 1000 A/cm{sup 2} and efficient cw operation. This method facilitates large-scale integration of VC-SEL devices.

Authors:
; ; ; ; ; ; ;  [1]
  1. Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701 (US)
Publication Date:
OSTI Identifier:
6970757
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (USA)
Additional Journal Information:
Journal Volume: 56:24; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; FABRICATION; DESIGN; ION IMPLANTATION; LASER CAVITIES; LASER MATERIALS; LASER MIRRORS; MOLECULAR BEAM EPITAXY; THRESHOLD CURRENT; CURRENTS; ELECTRIC CURRENTS; EPITAXY; LASERS; MATERIALS; MIRRORS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Orenstein, M, Lehmen, A C.V., Chang-Hasnain, C, Stoffel, N G, Harbison, J P, Florez, L T, Clausen, E, and Jewell, J E. Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definition. United States: N. p., 1990. Web. doi:10.1063/1.102923.
Orenstein, M, Lehmen, A C.V., Chang-Hasnain, C, Stoffel, N G, Harbison, J P, Florez, L T, Clausen, E, & Jewell, J E. Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definition. United States. https://doi.org/10.1063/1.102923
Orenstein, M, Lehmen, A C.V., Chang-Hasnain, C, Stoffel, N G, Harbison, J P, Florez, L T, Clausen, E, and Jewell, J E. Mon . "Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definition". United States. https://doi.org/10.1063/1.102923.
@article{osti_6970757,
title = {Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definition},
author = {Orenstein, M and Lehmen, A C.V. and Chang-Hasnain, C and Stoffel, N G and Harbison, J P and Florez, L T and Clausen, E and Jewell, J E},
abstractNote = {A planarity preserving method for the definition of vertical-cavity surface-emitting lasers (VC-SEL) is described. A strained-layer InGaAs quantum well VC-SEL structure was grown and lasers were laterally defined using a tailored deep proton implantation process. In these lasers we obtained low threshold current densities of 1000 A/cm{sup 2} and efficient cw operation. This method facilitates large-scale integration of VC-SEL devices.},
doi = {10.1063/1.102923},
url = {https://www.osti.gov/biblio/6970757}, journal = {Applied Physics Letters; (USA)},
issn = {0003-6951},
number = ,
volume = 56:24,
place = {United States},
year = {1990},
month = {6}
}