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Title: Radiation response of high speed CMOS integrated circuits

Abstract

This paper studies the total dose and dose rate radiation response of the FCT family of high speed CMOS integrated circuits. Data taken on the devices is used to establish the dominant failure modes, and this data is further analyzed using one-sided tolerance factors for normal distribution statistical analysis.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Rolm Mil Spec Computers Corp., San Jose, CA (US)
OSTI Identifier:
6951785
Report Number(s):
CONF-8707112-
Journal ID: CODEN: IETNA; TRN: 88-025505
Resource Type:
Conference
Journal Name:
IEEE Trans. Nucl. Sci.; (United States)
Additional Journal Information:
Journal Volume: NS-34:6; Conference: Annual conference on nuclear and space radiation effects, Snowmass Village, CO, USA, 28 Jul 1987
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; ELECTRONIC CIRCUITS; INTEGRATED CIRCUITS; STATISTICAL MODELS; DOSES; MATHEMATICAL MODELS; MICROELECTRONIC CIRCUITS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS; 360605* - Materials- Radiation Effects; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Yue, H, Davison, D, Jennings, R F, Lothongkam, P, Rinerson, D, and Wyland, D. Radiation response of high speed CMOS integrated circuits. United States: N. p., 1987. Web.
Yue, H, Davison, D, Jennings, R F, Lothongkam, P, Rinerson, D, & Wyland, D. Radiation response of high speed CMOS integrated circuits. United States.
Yue, H, Davison, D, Jennings, R F, Lothongkam, P, Rinerson, D, and Wyland, D. Tue . "Radiation response of high speed CMOS integrated circuits". United States.
@article{osti_6951785,
title = {Radiation response of high speed CMOS integrated circuits},
author = {Yue, H and Davison, D and Jennings, R F and Lothongkam, P and Rinerson, D and Wyland, D},
abstractNote = {This paper studies the total dose and dose rate radiation response of the FCT family of high speed CMOS integrated circuits. Data taken on the devices is used to establish the dominant failure modes, and this data is further analyzed using one-sided tolerance factors for normal distribution statistical analysis.},
doi = {},
journal = {IEEE Trans. Nucl. Sci.; (United States)},
number = ,
volume = NS-34:6,
place = {United States},
year = {1987},
month = {12}
}

Conference:
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