Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy
- Department of Materials Science, University of Utah, Salt Lake City, Utah 84112 (USA) Engineering and Electrical Engineering, University of Utah, Salt Lake City, Utah 84112 (USA)
AlGaInP epitaxial layers grown at 690 {degree}C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {l brace}111{r brace} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, forms the columnar structure.
- OSTI ID:
- 6947173
- Journal Information:
- Applied Physics Letters; (USA), Vol. 56:15; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM PHOSPHIDES
MICROSTRUCTURE
VAPOR PHASE EPITAXY
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
CHEMICAL VAPOR DEPOSITION
MODULATION
ORGANOMETALLIC COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
ALUMINIUM COMPOUNDS
CHEMICAL COATING
CRYSTAL STRUCTURE
DEPOSITION
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MICROSCOPY
ORGANIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SURFACE COATING
360602* - Other Materials- Structure & Phase Studies