Polish-induced damage in l angle 100 r angle GaAs: A comparison of transmission electron microscopy and Raman spectroscopy

Journal Article · Tue May 01 00:00:00 EDT 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.344928· OSTI ID:6946290

George, T; Weber, Z L; Weber, E R ^[1]; Pollak, F H ^[2]

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1. Department of Materials Science, University of California, Berkeley, California 94720 (USA) Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkely, California 94720 (USA)
2. Department of Physics, Brooklyn College of the City University of New York, Brooklyn, New York 11210 (USA)

This communication presents a comparative study of polish-induced effects in {l angle}100{r angle} GaAs by Raman spectroscopy (strain) and cross-sectional transmission electron microscopy (dislocation density). It is found that the depth and polish-time dependence of both the strain and dislocation density obey the same relationship. However, the skin depth evaluated by Raman scattering is a factor of 10 smaller than that determined from transmission electron microscopy.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6946290
• Journal Information: Journal of Applied Physics; (USA), Vol. 67:9; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
POLISHING
DAMAGE
DISLOCATIONS
RAMAN SPECTRA
STRAINS
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
GALLIUM COMPOUNDS
LINE DEFECTS
MICROSCOPY
PNICTIDES
SPECTRA
SURFACE FINISHING
360604* - Materials- Corrosion
Erosion
& Degradation