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Title: Plasma ion implantation technology for broad industrial application

Abstract

The recently invented Plasma Ion Implantation (PII) process (1987) [J. R. Conrad, U.S. Patent No. 764394 (August 16, 1988)] is currently under intense industrial engineering investigation and development. A critical component of PII for broad industrial utilization is the availability of an efficient modulator system that applies the high voltage pulse to the workpiece. A modulator technology assessment and selection is carried out. The requirements of the PII process favor the selection of a hard-tube modulator. The PII process favors the application of beam switch tube technology such as the Litton L-5012 and L-5097. These Litton tubes have already been selected by LANL and utilized in their pilot engineering demonstration experiment with GM and the University of Wisconsin. The performance, physical operation, and potential enhancements of the Litton beam switch tubes L-5012 and L-5097 will be discussed in connection with the requirements of the emerging plasma ion implantation industrial modulator technology.

Authors:
; ;  [1]
  1. (Litton Systems, Inc., Electron Devices Division, San Carlos, California 94070 (United States))
Publication Date:
OSTI Identifier:
6943067
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
Additional Journal Information:
Journal Volume: 12:2; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ION IMPLANTATION; EQUIPMENT; ELECTRONIC CIRCUITS; PERFORMANCE; VOLTAGE DROP; 440800* - Miscellaneous Instrumentation- (1990-); 665300 - Interactions Between Beams & Condensed Matter- (1992-)

Citation Formats

Deb, D., Siambis, J., and Symons, R. Plasma ion implantation technology for broad industrial application. United States: N. p., 1994. Web. doi:10.1116/1.587354.
Deb, D., Siambis, J., & Symons, R. Plasma ion implantation technology for broad industrial application. United States. doi:10.1116/1.587354.
Deb, D., Siambis, J., and Symons, R. Tue . "Plasma ion implantation technology for broad industrial application". United States. doi:10.1116/1.587354.
@article{osti_6943067,
title = {Plasma ion implantation technology for broad industrial application},
author = {Deb, D. and Siambis, J. and Symons, R.},
abstractNote = {The recently invented Plasma Ion Implantation (PII) process (1987) [J. R. Conrad, U.S. Patent No. 764394 (August 16, 1988)] is currently under intense industrial engineering investigation and development. A critical component of PII for broad industrial utilization is the availability of an efficient modulator system that applies the high voltage pulse to the workpiece. A modulator technology assessment and selection is carried out. The requirements of the PII process favor the selection of a hard-tube modulator. The PII process favors the application of beam switch tube technology such as the Litton L-5012 and L-5097. These Litton tubes have already been selected by LANL and utilized in their pilot engineering demonstration experiment with GM and the University of Wisconsin. The performance, physical operation, and potential enhancements of the Litton beam switch tubes L-5012 and L-5097 will be discussed in connection with the requirements of the emerging plasma ion implantation industrial modulator technology.},
doi = {10.1116/1.587354},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)},
issn = {0734-211X},
number = ,
volume = 12:2,
place = {United States},
year = {1994},
month = {3}
}